非晶态Te₈₁Ge₁₅Sb₄薄膜材料的电学性能

来源期刊：中南大学学报(自然科学版)1995年第3期

论文作者：宋练鹏

文章页码：377 - 380

关键词：伏－安特性; 玻璃化转变/开关效应

Key words：current-voltage characteristics; glass transition/switching effect

摘    要：对用熔体淬火再真空蒸发所制备的非晶态Te₈₁Ge₁₅Sb₄薄膜的伏－安特性,直流电导率及玻璃转变温度等性能进行了研究.结果表明,这种材料具有较好的开关效应及较高的热稳定性,可用作开关器件等.

Abstract: The current-voltage characteristic and the activation energy for DC electrical conductionand the glass transition temperature of Te₈₁Ge₁₅Sb₄ thin film have been studied,which was prepared by the method of melt-quenching and then vacuum evaporation.The results show that the material possesses both better memory switching effect and higher thermal-stability.It can be used for switching elements.