氧氮磷杂质对硅片高温形变的影响

来源期刊：中南大学学报(自然科学版)1998年第1期

论文作者：谢书银 王丙义 蔡爱军 李立本 张锦心

文章页码：58 - 61

关键词：硅;氧;氮;磷;形变

Key words：silicon; oxygen; nitrogen; phosphorus; deformation

摘    要：通过模拟集成电路高温工艺的1200℃, 1.5 h后急冷热处理,研究了硅中氧、氮、磷3种杂质对硅片高温工艺过程中塑性形变的影响.实验结果表明,普通氩气氛下直拉单晶硅(ACZSi)高温弯曲度变化只是含氧很少的区熔硅(FZSi)的1/3左右.在含氮气氛下直拉硅(NCZSi)中,氮含量为4.5×10¹⁵cm^-3的单晶尾部高温热处理弯曲度约是氮含量很小的单晶头部的1/3,重掺磷硅片热处理形变比普通硅片大得多.

Abstract: The effects of nitrogen, oxygen and phosphorus in silicon on the deformation of silicon wafer cooled rapidly after heat treating at 1200℃for 1.5 h were studied by simulation experiment of IC high temperature process. The results showed that elevated bow change of ACZSi was only 1/3 of that of FZSi; the elevated bow change of head of NCZSi crystal which contains fewer N was 3 times of that of tip of NCZSi containing N 4.5×10¹⁵cm^-3. The elevated deformation of silicon wafer heavily doped with P was larger than that of ordinary silicon wafer.