氮化硅陶瓷中的分形生长

来源期刊：中国有色金属学报2001年第z1期

论文作者：蒋俊 祝昌军 高玲 杨海涛

文章页码：172 - 175

关键词：分形生长； 氮化硅陶瓷； 维数

Key words：fractal growth； Si₃N₄ ceramics； fractal dimension

摘    要：利用透射电子显微镜 (TEM)在纳米尺度上直接观察由氮化硅分解出的硅蒸气在蒸发 凝聚过程中产生的分形生长这一实验现象 ,结合相对应的有限扩散凝聚 (DLA)模型以及核晶凝聚 (NA)模型 ,对所获得的分形结构进行了描述和讨论 ,并探讨了分形生长的发生机理。同时 ,由实验中所拍摄的一组照片计算其分形维数 ,分别为D_m1≈1.09,D_m2≈1.5 2 ,D_m3 ≈1.78,其中D_m3≈1.78与DLA模型的理论预测值以及数值模拟结果较一致

Abstract: The fractal structure was described and the growth mechanism was studied according to an experimental study of fractal growth. The fractal growth process generated by evaporation condensation of Si (g) decomposed from Si 3N 4 in sintered silicon nitride, can be observed with TEM in nanometer scale. Also, the fractal dimension was calculated as D_m1≈1.09, D_m2 ≈1.52, D_m3 ≈1.78, respectively. The result D_m3 ≈1.78 was in agreement with those reported.