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455002, China摘 要:<正> The extraction behavior and mechanism of gallium(Ⅲ) and thallium(Ⅰ) or indium(Ⅲ) and thallium(Ⅰ) with Sec-octylphenoxy acetic acid......
Synthesis of Polycrystalline Yb:Gd3Ga5O12 Nanopowders by Homogeneous Precipitation Method黄德馨1,2,刘景和11. Department of Materials Science and Engineering,Changchun University of Science and Technology2. Department of Materials Science and Engineering,Jilin Architectural and Civil Engineering Institute摘 要:The Ytterbium doped gadolinium gallium garnet [Yb3......
">This paper explores a new laser working material: gallium scandium gadolinium(GSGG), which was successfully prepared by one step co-precipitation method, and the potential properties of this Nd3+doped......
Preparation and Characterization of Y3Sc2Ga3O12 Nano-Polycrystalline Powders by Co-Precipitation Method苏静,张庆礼,邵淑芳,谷长江,万松明,殷绍唐摘 要:In order to grow high-quality gallium garnet crystals,polycrystalline materials were used as starting materials.YSGG precursor was synthesized by co-precipitation method using aqueous ammonia as a precipitator......
mapped in the graph. An empirical formula has been presented to reflect the effect of elements nickel (Ni), manganese (Mn)and gallium (Ga), on the martensite start temperature (Ms). The martensitic......
for all components are obtained.The activity of gold and gallium shows negative deviation from Rault’s law for all investigated sections,while antimony activity is close to the line of ideal......
金属氧化物(IGZO)TFT-LCD的工艺技术发展趋势及方向黄伟剑中国电子工程设计院摘 要:铟镓锌氧化物IGZO(indium gallium zinc oxide)是用于新一代薄膜液晶显示屏薄膜晶体管沟道层的材料.研究铟镓锌金属氧化物IGZO在TFT-LCD制造应用中的工艺技术发展趋势及方向.分析了铟镓锌氧化物IGZO在TFT-LCD中的作用和使用现状,分析了TFT-LCD液晶显示器的功能特性和技术特点.结合金属氧化物IGZO的应用,阐述了未来TFT-LCD液晶显示器发展的趋势和方向,TFT-LCD的工艺技术将向着高集成度,高环保性,高分辨率,高水平垂直角,高显示亮度,长使用寿命周期等方向发展,随着大面积低温多晶硅TFT-LCD的使用,TFT-LCD发展空间广阔,将迅速成为当前和未来液晶显示器的主流......
annealing processes, respectively. These topics were illustrated in the paper by examples of modeling and experimental results of bulk growth of silicon (Si), gallium arsenide (GaAs), indium phosphide (InP......
LASER LIFT-OFF OF GaN THIN FILMS FROM SAPPHIRE SUBSTRATES B.Shen1,Y.P.Wang1,X.Q.Xiu1,Y.D.Zheng1,Z.G.Liu1,Y.Shi1,R.Zhang1,S.L.Gu1,J.Xu1 (1.Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University. Nan1ing 210093, China) Abstract:Gallium Nitride film was successfully separated from sapphire substrate by laser radi-ation. The absorption of the 248nm......
吻合较好.关键词:GaAs;镓;真空热分解;动力学模拟Thermal decomposition of gallium arsenide under vacuum: Theoretical calculation and experimentHU Liang1,2,LIU Da-chun1,2,CHEN Xiu-min1,2,YANG Bin1,2,BAI Ping-ping1,2,DUAN... of distillation temperature and distillation time on the separation of Ga and As were investigated. The experiment results show that the metallic gallium obtained is good and the content of which is larger......