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Institute of Optics, Fine Mechanics and Physics,Chinese Academy of Science摘 要:The point defects and photoluminescence(PL)spectra of gallium nitride(GaN......
of Zhejiang Province摘 要:A novel series of Ce3+-doped Yb3 Al5-xGaxO12(x = 0, 1,2, 3,4, 5) powders of ytterbium aluminum gallium garnets were synthesized by high......
固相烧结反应法制备IGZO粉末孟璇1,2,陈敬超1,2,贾清翠1,2,杨波1,2,庄严1,2,于杰1,21. 昆明理工大学稀贵及有色金属先进材料教育部重点实验室2. 云南省新材料制备与加工重点实验室摘 要:以高纯度的ZnO,In2O3和Ga2O3等氧化物粉末为原料,经过球磨充分混合并细化后,采用固相烧结反应法制备IGZO(indium gallium zinc oxide)粉末,利用X射线衍射(XRD)与扫描电镜(SEM)对该粉末的物相组成,颗粒表面形貌与粒径等进行观察与分析,研究烧结温度,保温时间及球料质量比对IGZO粉末形貌与结构的影响.结果表明:在保温时间为6 h的条件下,烧结温度为1 100℃时,Ga2O3和ZnO反应生成ZnGa2O4,所得粉末以ZnGa2O4相为主,仍有In2O3未发生反应......
Infuence of Process Parameters on the RF Sputtered GaP Thin FilmsD.A.Mota1,2,G.Hema Chandra1,3,A.Guedes43. Thin Film Laboratory, Material Physics Division, VIT University4. Geology Department, Faculty of Science, University of Porto, Rua do Campo Alegre n°687摘 要:In this work,gallium phosphide thin films were deposited on glass substrates by radio......
of Zhejiang Province摘 要:A novel series of Ce3+-doped Yb3 Al5-xGaxO12(x = 0, 1,2, 3,4, 5) powders of ytterbium aluminum gallium garnets were synthesized by high......
Trans. Nonferrous Met. Soc. China 30(2020) 3404-3416 Numerical simulation and experimental verification of axial-directional crystallization purification process for high-purity gallium You-dong... purification (ADCP) process of gallium (Ga) raw material at different coolant temperatures (Tc), and the evolutions of melt/crystal (m/c) interface shape, temperature distribution and thermal stresses were......
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vapor phase epitaxy (MOVPE) growth of indium gallium nitride (InGaN) has been discussed in detail towards the fabrication of solar cell. The InGaN film with In contents up to 0.4 are successfully......
in the eutectic reaction, and the outgrowth of Nd,Cr∶GSGG and GdScO3. So it is necessary to decrease the effect of gallium volatilization during the growth in order to avoid eutectic growth and obtain a high......
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