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Magnetic Properties of Erbium Gallium Gallate under High Magnetic Field YANG Cuihong1,Cheng Haiying1,Zhang Xijuan1,Wang Wei3 (1.College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, China;2.Department of Basic Course, Yancheng Institute of Technology, Yancheng 224002, China;3.Department of Applied Physics,Shanghai Jiaotong University, Shanghai 200030, China) Abstract......
镓元素双线吸收法测量富氧空气-乙炔火焰的温度吴少尉1,郑晓霞1(1.湖北省恩施土家族苗族自治州湖北民族学院化学与环境工程学院)摘 要:基于吸光度定义和玻尔兹曼分布,推导了镓元素双线吸收法测量富氧空气-乙炔火焰温度的最简公式.在镓元素的403.30 nm和417.21 nm两线处,分别测量镓标准溶液喷入不同氧气,乙炔流量比的燃烧火焰中的吸光度,代入最简测温公式,获得了富氧空气-乙炔新型高温火焰的温度分布范围,进行适当回归外推后判断富氧空气-乙炔火焰的温度分布范围为2300~2 920 K.比常规空气-乙炔火焰温度......
Kinetic and thermodynamic studies of adsorption of gallium(Ⅲ) on nano-TiO2ZHANG Leia, ZHU Yuana, LI Hongmeia, LIU Naa, LIU Xueyana, and GUO Xuejunb a College of Chemistry, Liaoning University... of gallium from aqueous solution in batch equilibrium experiments to investigate its adsorption properties. It was found that the adsorption efficiency of Ga(Ⅲ) was more than 96% at pH 3.0. The adsorption......
Electrochemical properties of gadolinium on liquid gallium electrode in LiCl-KCl eutecticBo Li1,2,Kui Liu2,Jingwen Pang2,Liyong Yuan2,Yalan Liu2,Mingzhang Lin11. School of Nuclear Science... at the liquid gallium(Ga) electrode, experiments were performed both on the inert tungsten(W) and liquid gallium(Ga) electrode at different temperatures in a range from 723 to 823 K, which show......
Electrochemical properties of gadolinium on liquid gallium electrode in LiCl-KCl eutecticBo Li1,2,Kui Liu2,Jingwen Pang2,Liyong Yuan2,Yalan Liu2,Mingzhang Lin11. School of Nuclear Science... at the liquid gallium(Ga) electrode, experiments were performed both on the inert tungsten(W) and liquid gallium(Ga) electrode at different temperatures in a range from 723 to 823 K, which show......
Atomic Emission Spectrographic Analysis of High-purity Gallium with Prior Partial Dissolution of Matrix陈家英,钟秀霞,梁树权摘 要:<正> An improved method has been developed for enriching and determining trace In,Pt,Sn,Co,Hg,Pb,Ni,Bi,Pd,Cu and Ag in high-purity gallium.Sample was treated by PDM(partial dissolution of matrix)withHCl(11mol/L)-HNO3(0.5mol/L......
Fabrication of hexagonal gallium nitride films on silicon (111) substratesYANG Li, XUE Chengshan WANG Cuimei LI Huaixiang and REN Yuwen1) Chemistry Function Materials Lab, Institute of Semiconductors... 要:<正> Hexagonal gallium nitride films were successfully fabricated through ammoniating Ga2O3 films deposited on silicon (111) substrates......
Effects of Nitridation Temperature on Characteristics of Gallium Nitride Thin Films Prepared Via Two-Step MethodChee Yong Fong,Sha Shiong Ng,Fong Kwong Yam,Haslan Abu Hassan,Zainuriah HassanNano... sapphire(0001) substrates via two-step method without the assist of buffer layer and catalysts was demonstrated.First,gallium oxide(Ga2O3) thin films were deposited on sapphire substrates by radio......
Properties of Gallium Phosphide Thick Films Prepared on Zinc Sulfide Substrates by Radio-Frequency Magnetron SputteringYangping Li and Zhengtang Liu School of Materials Science and Engineering, Northwestern Polytechnical University, Xi an 710072, China摘 要:Radio-frequency (RF) magnetron sputtering was employed to prepare gallium phosphide (GaP) thick......
Recovery of Gallium from Zinc Hydrometallurgy System by Emulsion Liquid Membrane石太宏,王松平,万印华,张秀娟摘 要:１ＩｎｔｒｏｄｕｃｔｉｏｎＧａｌｉｕｍｉｓｏｎｅｏｆｔｈｅｍｏｓｔｉｍｐｏｒｔａｎｔｍａｔｅｒｉａｌｓｉｎｔｈｅｅｌｅｃｔｒｏｎｉｃｉｎｄｕｓｔｒｙｂｅｃａｕｓｅｏｆｉｔｓｅｘｃｅｌｅｎｔｐｈｙｓｉｃａｌａｎｄｃｈｅｍｉｃａｌｐｒｏｐｅｒｔｉｅｓ...关键词:......
