High Rate Growth of a-Si and μc-Si Thin Films with Facing-target PECVD
来源期刊：材料科学与工程学报2000年增刊第2期
论文作者：C.T.Chou Z.Shi F.M.Zhang
摘 要：The first investigation on high rate growth of uniform a-Si and μc-Si thin films with facingtarget plasma enhanced chemical vapour deposition (FTPECVD) has been presented here. It has been shown that by employing FTPECVD both a-Si and μc-Si thin films can be fabricated with rates of up to 10μm/h and l μm/h, respectively, around 10 times higher than those of the conventional PECVD, and the correspondent gas utility is about 20 times higher. As indicated by Raman spectroscopy measurement, the crystallinity of the materials is as high as 85%. A columnar structure in the films has been revealed by TEM analysis, a reflection of epitaxial growth in the deposition process.
C.T.Chou1，Z.Shi1，F.M.Zhang1
(1.Pacific Solar Pty Ltd, 82 Bay Street, Botany, NSW 2019, Australia)
摘要:The first investigation on high rate growth of uniform a-Si and μc-Si thin films with facingtarget plasma enhanced chemical vapour deposition (FTPECVD) has been presented here. It has been shown that by employing FTPECVD both a-Si and μc-Si thin films can be fabricated with rates of up to 10μm/h and l μm/h, respectively, around 10 times higher than those of the conventional PECVD, and the correspondent gas utility is about 20 times higher. As indicated by Raman spectroscopy measurement, the crystallinity of the materials is as high as 85%. A columnar structure in the films has been revealed by TEM analysis, a reflection of epitaxial growth in the deposition process.
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