Metallorganic Vapor Phase Epitaxy of(AlGa)InP on GaAs at Atmospheric Pressure

Hongwen REN Baibiao HUANG Shuqin YU Xian’gang XU Shiwen LIU Minhua JIANG Institute of Crystal Materials,Shandong University,Jinan,250100,China

摘 要：<正> High quality （AlGa）InP epilayers lattice matched on GaAs substrates were grown by atmosphericpressure metallorganic vapor phase epitaxy （AP-MOVPE）.The relationship between surfacemorphologies and lattice mismatches was studied.The influence of Al incorporation to thephotoluminescence and electronic properties of AlGaInP was measured.The applicability of growthat atmospheric pressure and the passivation of Zn in AlGaInP were discussed.

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