Rapid communication Ruthenium disulfide thin films prepared by the successive ionic layer adsorption and reaction (SILAR) method
来源期刊：Rare Metals2004年第1期
论文作者：LIU Xiaoxin, JIN Zhengguo, ZHAO Juan, and BU ShaojingKey Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin , China
文章页码：93 - 96
摘 要：<正> RuS2 thin films were prepared by the cost-effective chemical method——successive ionic layer adsorption and reaction （SILAR）. The structural, optical, and electrical properties were investigated using X-ray diffraction, scanning electron microscopy, optical transmittance, and electrical resistivity methods. The results indicate that the films are homogeneous and dense; the structure of the as-deposited films is amorphous and they crystallize after annealed at 500℃ for 30 min. The band gap of the as-deposited films is found to be 1.85 eV, and the electrical resistivity of them is in the order of 105 Ω.cm.
摘要：<正> RuS2 thin films were prepared by the cost-effective chemical method——successive ionic layer adsorption and reaction （SILAR）. The structural, optical, and electrical properties were investigated using X-ray diffraction, scanning electron microscopy, optical transmittance, and electrical resistivity methods. The results indicate that the films are homogeneous and dense; the structure of the as-deposited films is amorphous and they crystallize after annealed at 500℃ for 30 min. The band gap of the as-deposited films is found to be 1.85 eV, and the electrical resistivity of them is in the order of 105 Ω.cm.
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