硫脲在铜阴极电沉积中的作用

来源期刊：中国有色金属学报1999年第2期

论文作者：董云会 许珂敬 刘曙光 王洪燕

文章页码：370 - 376

关键词：铜沉积 硫脲 共沉积

Key words：copper ; thiourea ; codeposition

摘    要：用电位阶跃法，得出产生光滑铜沉积时硫脲(TU) 的最佳浓度范围为10 mg/L。由电解制样，并对样品进行X射线衍射、SEM测试 ，结果表明，硫脲的存在使沉积表面颗粒细化，但其浓度大于20 mg/L时会造成“突出”生长，从而显著影响沉积织构及沉积生长类型。X射线光电子能谱(XPS)分析表明，铜沉积中的“硫”主要来自硫脲。

Abstract: The smooth copper deposition has been investigated by potentiostatic steps method, and the obtained optimum concentration of thiourea in electrolyte is 10mg/L. The results of XRD a nd SEM for electrolysis sample showed that the thiourea makes the grains fine on deposit surface, and obviously affects the texture and growing structure type of copper deposit when the concentration of thiourea is more than 20mg/L. The results of XPS analysis showed that the “sulphur” in copper deposit is of thiourea origion.