超声外场下SiCp/7085复合材料界面结合机理

来源期刊:中南大学学报(自然科学版)2016年第9期

论文作者:张立华 李畅梓 李晓谦 黎正华 李瑞卿 董方

文章页码:2968 - 2976

关键词:超声外场;7085铝合金;SiCp;界面

Key words:ultrasonic radiation; 7085Aluminum alloy; SiCp; interface

摘    要:采用半固态混合—机械搅拌—超声搅拌工艺制备体积分数为10%的SiCp/7085复合材料,通过扫描电镜(SEM)和能谱仪(EDS)分析制备过程中2种粒度SiC颗粒的界面结合、界面相及成分的演变规律,研究超声外场对复合材料界面结合的影响机理。研究结果表明:半固态混合—机械搅拌工艺基本实现了大粒度SiC颗粒与基体的界面结合,但在界面处生成了大量Al4C3,而对于小粒度颗粒,机械搅拌的作用效果不明显;超声外场作用下的空化效应产生高温高压,有效改善小颗粒与熔体的润湿性,并使得Mg元素在界面处富集,生成MgO和MgAl2O4等界面强化相,获得更优的结合界面。

Abstract: SiCp/7085 composites with 10% (volume fraction) particle were fabricated by semi-solid mixture, mechanical stirring and ultrasonic radiation process. The evolution of interfacial combinative state, interface phase and composition between the particles of two sizes and melt during the fabrication process was investigated by SEM and EDS to research the mechanism of the ultrasonic radiation transformation interface. The results show that the semi-solid mixture and mechanical stirring process accomplish the wetting between the larger particles and melt in the main, while generate Al4C3 at the interface, but there is not remarkable improvement of wettability between the small particles and melt. As a result of ultrasonic radiation, Mg is reriched at the interface, which gives rise to the formation of interface strengthening phase MgO and MgAl2O4, the interface bonding is stronger than that of semi-solid mixture and mechanical agitation.

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