Preparation of diamond/Cu microchannel heat sink by chemical vapor deposition
来源期刊：中南大学学报(英文版)2015年第3期
论文作者：LIU Xue-zhang(刘学璋) LUO Hao(罗浩) SU Xu(苏栩) YU Zhi-ming(余志明)
文章页码：835 - 841
Key words：chemical vapor deposition; microchannel; nanoseeding; Ti interlayer; Cu substrate
Abstract: A Ti interlayer with thickness about 300 nm was sputtered on Cu microchannels, followed by an ultrasonic seeding with nanodiamond powders. Adherent diamond film with crystalline grains close to thermal equilibrium shape was tightly deposited by hot-filament chemical vapor deposition (HF-CVD). The nucleation and growth of diamond were investigated with micro-Raman spectroscope and field emission scanning electron microscope (FE-SEM) with energy dispersive X-ray detector (EDX). Results show that the nucleation density is found to be up to 1010 cm-2. The enhancement of the nucleation kinetics can be attributed to the nanometer rough Ti interlayer surface. An improved absorption of nanodiamond particles is found, which act as starting points for the diamond nucleation during HF-CVD process. Furthermore, finite element simulation was conducted to understand the thermal management properties of prepared diamond/Cu microchannel heat sink.
LIU Xue-zhang(刘学璋)1, LUO Hao(罗浩)2, SU Xu(苏栩)2, YU Zhi-ming(余志明)2
(1. School of Materials and Mechanical Engineering, Jiangxi Science and Technology Normal University,
Nanchang 330013, China;
2. School of Materials Science and Engineering, Central South University, Changsha 410083, China)
Abstract:A Ti interlayer with thickness about 300 nm was sputtered on Cu microchannels, followed by an ultrasonic seeding with nanodiamond powders. Adherent diamond film with crystalline grains close to thermal equilibrium shape was tightly deposited by hot-filament chemical vapor deposition (HF-CVD). The nucleation and growth of diamond were investigated with micro-Raman spectroscope and field emission scanning electron microscope (FE-SEM) with energy dispersive X-ray detector (EDX). Results show that the nucleation density is found to be up to 1010 cm-2. The enhancement of the nucleation kinetics can be attributed to the nanometer rough Ti interlayer surface. An improved absorption of nanodiamond particles is found, which act as starting points for the diamond nucleation during HF-CVD process. Furthermore, finite element simulation was conducted to understand the thermal management properties of prepared diamond/Cu microchannel heat sink.
Key words:chemical vapor deposition; microchannel; nanoseeding; Ti interlayer; Cu substrate
