ANTIMONY INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON
来源期刊：Acta Metallurgica Sinica2007年第3期
论文作者：I. Gordon O. Van Der Biest H.Z. Li Y. Wang P. Schattschneider G.M. Wu C.N. Yu
Key words：antimony; polycrystalline; silicon; thin film;
Abstract: Antimony induced crystallization of PVD (physics vapor deposition) amorphous silicon can be observed on sapphire substrates. Very large crystalline regions up to several tens of micrometers can be formed. The Si diffraction patterns of the area of crystallization can be observed with TEM (transmission electron microscopy). Only a few and much smaller crystals of the order of 1μm were formed when the antimony layer was deposited by MBE(molecular beam epitaxy) compared with a layer formed by thermal evaporation. The use of high vacuum is essential in order to observe any Sb induced crystallization at all. In addition it is necessary to take measures to limit the evaporation of the antimony.
I. Gordon1，O. Van Der Biest2，H.Z. Li3，Y. Wang4，P. Schattschneider5，G.M. Wu6，C.N. Yu4
(1.Development of Technique, Interuniversity Micro Electronics Center, B-3001 Leuven, Belgium;
2.School of Materials Science and Engineering, Katholieke Universiteit Leuven, B-3001 Heverlee(Leuven;
3.Center of Engineering Education, Beijing Institute of Petto-Chemical Technology,Beijing 102617, China;
4.School of Science, Beijing Institute of Petto-Chemical Technology, Beijing 102617, China;
5.School of Materials Science and Engineering, Technische Universit(a;
6.School of Materials Science and Engineering, Beijing Institute of Petto-Chemical Technology,Beijing 102617, China)
Abstract:Antimony induced crystallization of PVD (physics vapor deposition) amorphous silicon can be observed on sapphire substrates. Very large crystalline regions up to several tens of micrometers can be formed. The Si diffraction patterns of the area of crystallization can be observed with TEM (transmission electron microscopy). Only a few and much smaller crystals of the order of 1μm were formed when the antimony layer was deposited by MBE(molecular beam epitaxy) compared with a layer formed by thermal evaporation. The use of high vacuum is essential in order to observe any Sb induced crystallization at all. In addition it is necessary to take measures to limit the evaporation of the antimony.
Key words:antimony; polycrystalline; silicon; thin film;
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