Composition change and capacitance properties of ruthenium oxide thin film
来源期刊：中南大学学报(英文版)2015年第1期
论文作者：LIU Hong(刘泓) GAN Wei-ping(甘卫平) LIU Zhong-wu(刘仲武) ZHENG Feng(郑峰)
文章页码：8 - 13
Key words：ruthenium oxide; thin film; heat treatment; composition change; electrochemical capacitor
Abstract: RuO2·nH2O film was deposited on tantalum foils by electrodeposition and heat treatment using RuCl3·3H2O as precursor. surface morphology, composition change and cyclic voltammetry from precursor to amorphous and crystalline RuO2·nH2O films were studied by X-ray diffractometer, fourier transformation infrared spectrometer, differential thermal analyzer, scanning electron microscope and electrochemical analyzer, respectively. The results show that the precursor was transformed gradually from amorphous to crystalline phase with temperature. When heat treated at 300 °C for 2 h, RuO2·nH2O electrode surface gains mass of 2.5 mg/cm2 with specific capacitance of 782 F/g. Besides, it is found that the specific capacitance of the film decreased by roughly 20% with voltage scan rate increasing from 5 to 250 mV/s.
LIU Hong(刘泓)1, GAN Wei-ping(甘卫平)2, LIU Zhong-wu(刘仲武)1, ZHENG Feng(郑峰)2
(1. School of Materials Science and Engineering, South China University of Technology, Guangzhou 510000, China;
2. School of Materials Science and Engineering, Central South University, Changsha 410083, China)
Abstract:RuO2·nH2O film was deposited on tantalum foils by electrodeposition and heat treatment using RuCl3·3H2O as precursor. surface morphology, composition change and cyclic voltammetry from precursor to amorphous and crystalline RuO2·nH2O films were studied by X-ray diffractometer, fourier transformation infrared spectrometer, differential thermal analyzer, scanning electron microscope and electrochemical analyzer, respectively. The results show that the precursor was transformed gradually from amorphous to crystalline phase with temperature. When heat treated at 300 °C for 2 h, RuO2·nH2O electrode surface gains mass of 2.5 mg/cm2 with specific capacitance of 782 F/g. Besides, it is found that the specific capacitance of the film decreased by roughly 20% with voltage scan rate increasing from 5 to 250 mV/s.
Key words:ruthenium oxide; thin film; heat treatment; composition change; electrochemical capacitor
