Ni控制掺杂InVO4薄膜的制备及其可见光催化活性

来源期刊:中国有色金属学报2006年第12期

论文作者:李新军 樊俊林 郑少健 王建华

文章页码:2104 - 2108

关键词:InVO4;Ni;光催化;可见光;控制掺杂

Key words:InVO4; Ni; photocatalysis; visible light; doped under control

摘    要:采用溶胶-凝胶(sol-gel)法制备Ni控制掺杂的InVO4可见光催化剂薄膜。 通过X射线衍射分析、 差热-热重分析确定InVO4晶体结构及合成工艺;采用UV-vis分光光度计测定了薄膜的光吸收特性; 利用电化学工作站研究了薄膜的光电化学特性; 并通过亚甲基蓝溶液在可见光照射下的催化降解脱色率来表征薄膜的催化活性。实验结果表明: InVO4的晶型转化温度约为500 ℃; InVO4的光吸收在可见光范围; 光电流谱显示Ni底层控制掺杂InVO4的信号明显增强, 催化活性明显增强, 而均匀掺杂的光电流信号减弱, 催化活性降低。 最后从光生载流子的分离方面初步探讨Ni控制掺杂对InVO4催化活性的影响机理。

Abstract: The thin films of InVO4 doped by Ni under control were prepared by sol-gel method, crystal structure of InVO4 and the synthesis process were characterized by X-ray diffractometry (XRD), differential thermal analysis associated with thermal gravimetric analysis (TGA-DTA). The absorbability of the films was studied by UV-vis spectrophotometer. The photoelectric characteristic of the films were studied by the electro-chemistry work station. And the visible photoelectric activities of the films were characterized by degradation rate of the methylene blue under visible light. The results show that the crystal transformation temperature of InVO4 is about 500 ℃. And the InVO4 films are visible response. The visible photocatalytic activity of the InVO4 film can be enhanced by Ni doping in the bottom layer whereas decreases by Ni uniform-doping. The photoelectric signal of the Ni bottom-doping InVO4 film is stronger than that of the Ni uniform-doping and pure ones. The mechanism of the photocatalytic activity of InVO4 film enhanced by Ni bottom-doping was also discussed based on the separation of photo generated carriers.

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