简介概要

MEVVA磁过滤等离子技术制备的Fe纳米颗粒薄膜结构

图书来源:二元合金相图及中间相晶体结构 二元合金相图及中间相晶体结构

作 者:唐仁政 田荣璋

出版时间:2009-05

定 价:320元

图书ISBN:978-7-81105-831-4

出版单位:中南大学出版社

详情信息展示

Properties of Resistivity, Reflection and Absorption Related to Structure of ITO Films

Yipeng Chao, Wu Tang and Xuehui Wang State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

摘 要:Indium tin oxide (ITO) films were fabricated on polyethylene terephthalate (PET) substrate at room tem- perature using dc magnetron sputtering technique with different sputtering powers. The structural, electrical and optical properties were investigated by X-ray diffraction (XRD), Hall effect, reflection and transmission, respectively. XRD patterns show gradual enhancement of crystalline quality with increasing sputtering power. Significant improvement of Hall mobility due to the reduction of defects was observed though the carrier density varied slightly. Simultaneously, the mean transmission in visible light range decreased severely with increasing sputtering power. Slight move toward shorter-wavelength side of absorption peak was due to the variation of plasma wavelength. The reflection increase of near-infrared light originated from the decrease of resistivity. Finally, band gap was obtained using Tauc s relation and it was consistent with Burstein-Moss shift.

关键词:

<上一页 1 下一页 >

有色金属在线官网  |   会议  |   在线投稿  |   购买纸书  |   科技图书馆

中南大学出版社 技术支持 版权声明   电话:0731-88830515 88830516   传真:0731-88710482   Email:administrator@cnnmol.com

互联网出版许可证:(署)网出证(京)字第342号   京ICP备17050991号-6      京公网安备11010802042557号