简介概要

Electronic packaging materials prepared by powder injecting molding and pressure infiltration process

来源期刊:Rare Metals2007年第6期

论文作者:YIN Fazhang), GUO Hong), JIA Chengchang), XU Jun), ZHANG Ximin), and ZHU Xuexin) ) National Engineering and Technology Research Center for Nonferrous Metals Composites, Beijing General Research Institute for Nonferrous Met-als, Beijing , China ) Materials Science and Engineering School, University of Science and Technology Beijing, Beijing , China

文章页码:625 - 629

摘    要:AlSiCp (65 vol.% SiC) electronic packaging materials were manufactured by powder injection molding (PIM) and pressure infiltration process in order to obtain near net-shaped parts. SiCp preformed compacts obtained by pre-sintering process at 1150 K have high strength and good appearance, and the ratio of open porosity to total porosity is nearly 98%. The relative density of composites is bigger than 99%. The thermal conductivity of AlSiCp composites fabricated by this method is 198 Wm1K1, and the coefficient of thermal expansion (CTE) is 8.0 × 106/K (298 K).

详情信息展示

Electronic packaging materials prepared by powder injecting molding and pressure infiltration process

YIN Fazhang1), GUO Hong1), JIA Chengchang2), XU Jun1), ZHANG Ximin1), and ZHU Xuexin1) 1) National Engineering and Technology Research Center for Nonferrous Metals Composites, Beijing General Research Institute for Nonferrous Met-als, Beijing 100088, China 2) Materials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China

摘 要:AlSiCp (65 vol.% SiC) electronic packaging materials were manufactured by powder injection molding (PIM) and pressure infiltration process in order to obtain near net-shaped parts. SiCp preformed compacts obtained by pre-sintering process at 1150 K have high strength and good appearance, and the ratio of open porosity to total porosity is nearly 98%. The relative density of composites is bigger than 99%. The thermal conductivity of AlSiCp composites fabricated by this method is 198 Wm1K1, and the coefficient of thermal expansion (CTE) is 8.0 × 106/K (298 K).

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