CHARACTERIZATION OF Sil-x-yGexCy FILMS GROWN BY ION IMPLANTATION AND SUBSEQUENT SOLID PHASE EPITAXY
来源期刊：Acta Metallurgica Sinica2002年第1期
论文作者：Y.Y.Wang S.Y.Ma J.Zhang W.J.Cheng X.Q.Liu
Key words：Si1-x-yGex Cy film; ion implantation; SPE;
Abstract: Si1 y GexCy ternary alloy films were grown on monocrystalline silicon substratesby C+ ion implantation and subsequent solid phase epitaxy (SPE). Two-step anneal-ing technique was employed in the SPE. The structure and electrical properties of thealloy films were determined using Fourier transform infrared spectroscopy and vander Pauw Hall measurements, respectively. With the optimization of two-step anneal-ing technique for the implanted Si1-x-y GexCy layers, a certain amount of C atomsoccupied substitutional sites and no SiC was formed.
Y.Y.Wang1，S.Y.Ma1，J.Zhang1，W.J.Cheng1，X.Q.Liu1
(1.Department of Physics, Lanzhou University, Lanzhou 730000, China;
2.Department of physics, Northwest Normal University, Lanzhou 730030, China)
Abstract:Si1 y GexCy ternary alloy films were grown on monocrystalline silicon substratesby C+ ion implantation and subsequent solid phase epitaxy (SPE). Two-step anneal-ing technique was employed in the SPE. The structure and electrical properties of thealloy films were determined using Fourier transform infrared spectroscopy and vander Pauw Hall measurements, respectively. With the optimization of two-step anneal-ing technique for the implanted Si1-x-y GexCy layers, a certain amount of C atomsoccupied substitutional sites and no SiC was formed.
Key words:Si1-x-yGex Cy film; ion implantation; SPE;
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