简介概要

Hierarchical Porous Patterns of n-type 6H-SiC Crystals via Photoelectrochemical Etching

来源期刊:JOURNAL OF MATERIALS SCIENCE TECHNOLOG2013年第7期

论文作者:Lihuan Wang Huihui Shao Xiaobo Hu Xiangang Xu

文章页码:655 - 661

摘    要:<正>Hierarchical porous patterns have been fabricated on the C face,Si face,and cross section of n-type 6H—SiC crystal via photo-electrochemical etching using HF/C2H5OH and HF/H2O2 as electrolytes.The porous layer displayed multiple and multiscale microstructures on different faces,including stalactite-like,sponge-like and dendritic porous structures on C face,echinoid micro-patterns on Si face,and columnar and keel-shaped micro-patterns on the cross section.The formation of hierarchical porous pattern is ascribed to the dynamic competition balance between the electrochemical oxidation rate and the oxide removal rate.It was found that increasing the ionic strength of the electrolyte can obviously disturb the surface morphology of the porous SiC during the photo-electrochemical etching.Possible mechanisms for selective etching were further discussed.

详情信息展示

Hierarchical Porous Patterns of n-type 6H-SiC Crystals via Photoelectrochemical Etching

Lihuan Wang,Huihui Shao,Xiaobo Hu,Xiangang Xu

State Key Laboratory of Crystal Materials,Shandong University

摘 要:<正>Hierarchical porous patterns have been fabricated on the C face,Si face,and cross section of n-type 6H—SiC crystal via photo-electrochemical etching using HF/C2H5OH and HF/H2O2 as electrolytes.The porous layer displayed multiple and multiscale microstructures on different faces,including stalactite-like,sponge-like and dendritic porous structures on C face,echinoid micro-patterns on Si face,and columnar and keel-shaped micro-patterns on the cross section.The formation of hierarchical porous pattern is ascribed to the dynamic competition balance between the electrochemical oxidation rate and the oxide removal rate.It was found that increasing the ionic strength of the electrolyte can obviously disturb the surface morphology of the porous SiC during the photo-electrochemical etching.Possible mechanisms for selective etching were further discussed.

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