Etching Study of SiC Wafers
来源期刊：JOURNAL OF RARE EARTHS2006年增刊第1期
论文作者：Wang Yingmin Li Juan Jiang Minhua Chen Xiufang Xu Xiangang Hu Xiaobo
Key words：defects; etching; SiC;
Abstract: SiC substrates grown by the sublimation method still have high densities of structural defects such as dislocations, micropipes, low-angle grain boundaries, macrodefects and polytypes. Wet etching was effectively used to study the defects of SiC. Etch pit shapes of defects and their origins were discussed. Most of the defects originate in the initial growth stage. Thus to optimize the early growth conditions especially the temperature distribution is a crucial problem.
Wang Yingmin1，Li Juan1，Jiang Minhua1，Chen Xiufang1，Xu Xiangang1，Hu Xiaobo1
(1.State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China)
Abstract:SiC substrates grown by the sublimation method still have high densities of structural defects such as dislocations, micropipes, low-angle grain boundaries, macrodefects and polytypes. Wet etching was effectively used to study the defects of SiC. Etch pit shapes of defects and their origins were discussed. Most of the defects originate in the initial growth stage. Thus to optimize the early growth conditions especially the temperature distribution is a crucial problem.
Key words:defects; etching; SiC;
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