Properties of doped ZnO transparent conductive thin films deposited by RF magnetron sputtering using a series of high quality ceramic targets
来源期刊：Rare Metals2008年第1期
论文作者：LIN Wei,MA Ruixin,SHAO Wei,KANG Bo,and WU Zhongliang Department of Nonferrous Metallurgy,University of Science and Technology Beijing,Beijing ,China
文章页码：32 - 35
摘 要：To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets（ZnO:Al,ZnO:（Al,Dy）,ZnO:（Al,Gd）,ZnO:（Al,Zr）,ZnO:（Al,Nb）,and ZnO:（Al,W）） were fabricated and used to deposit thin films onto glass substrates by radio frequency（RF） magnetron sputtering.X-ray diffraction（XRD） analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the（002） plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10-3 Ω·cm was obtained.
LIN Wei,MA Ruixin,SHAO Wei,KANG Bo,and WU Zhongliang Department of Nonferrous Metallurgy,University of Science and Technology Beijing,Beijing 100083,China
摘 要：To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets（ZnO:Al,ZnO:（Al,Dy）,ZnO:（Al,Gd）,ZnO:（Al,Zr）,ZnO:（Al,Nb）,and ZnO:（Al,W）） were fabricated and used to deposit thin films onto glass substrates by radio frequency（RF） magnetron sputtering.X-ray diffraction（XRD） analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the（002） plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10-3 Ω·cm was obtained.
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