Structural, Optical and Electrical Properties of Ga Doped ZnO/Cu grid/Ga Doped ZnO Transparent Electrodes

Cholho Jang^1,2，Qingjun Jiang¹，Jianguo Lu¹，Zhizhen Ye¹

1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University2. Department of Materials Science, Kim Il Sung University

摘 要：Ga doped ZnO（GZO）/Cu grid/GZO transparent conductive electrode（TCE） structures were fabricated at room temperature（RT） by using electron beam evaporation（EBE） for the Cu grids and RF magnetron sputtering for the GZO layers. In this work, we investigated the electrical and optical characteristics of GZO/Cu grid/GZO multilayer electrode for thin film solar cells by using evaporated Cu grid and sputtered GZO thin films to enhance the optical transparency without significantly affecting their conductivity.The optical transmittance and sheet resistance of GZO/Cu grid/GZO multilayer are higher than those of GZO/Cu film/GZO multilayer independent of Cu grid separation distance and increase with increasing Cu grid separation distances. The calculation of both transmittance and sheet resistance of GZO/Cu grid/GZO multilayer was based on Cu filling factor correlated with the geometry of Cu grid. The calculated values for the transmittance and sheet resistance of the GZO/Cu grid/GZO multilayer were similar to the experimentally observed ones. The highest figure of merit ΦTC is 5.18 × 10-3Ω-1for the GZO/Cu grid/GZO multilayer with Cu grid separation distance of 1 mm was obtained, in this case, the transmittance and resistivity were 82.72% and 2.17 × 10-4Ω cm, respectively. The transmittance and resistivity are acceptable for practical thin film solar cell applications.

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