Epitaxy and Growth Mechanism of Gallium Antimonide by MOCVD
来源期刊：Rare Metals1993年第3期
论文作者：韦光宇 彭瑞伍 任尧成 丁永庆
文章页码：214 - 218
摘 要：<正> GaSb epilayers were grown on GaAs and/or GaSb substrates by MOCVD respectively.The influenceof growth conditions on the properties of the epilayers was studied in order to improve the growth pro-cesses.The growth mechanism of MOCVD GaSb was investigated.An equation derived for chemical reac-tion controlled growth rate of MOCVD GaSb was verified by the experiments.The typical FWHM of doub-le crystal X-ray diffraction（DCXD）spectra of GaSb epilayers on GaSb and/or GaAs substrates are 20arcsec and 150 arcsec,respectively.The 300 K hole concentration of p=1.2×1016cm-3 with Hall mobilityof 898 cm2/V·s is obtained.
韦光宇，彭瑞伍，任尧成，丁永庆
摘 要：<正> GaSb epilayers were grown on GaAs and/or GaSb substrates by MOCVD respectively.The influenceof growth conditions on the properties of the epilayers was studied in order to improve the growth pro-cesses.The growth mechanism of MOCVD GaSb was investigated.An equation derived for chemical reac-tion controlled growth rate of MOCVD GaSb was verified by the experiments.The typical FWHM of doub-le crystal X-ray diffraction（DCXD）spectra of GaSb epilayers on GaSb and/or GaAs substrates are 20arcsec and 150 arcsec,respectively.The 300 K hole concentration of p=1.2×1016cm-3 with Hall mobilityof 898 cm2/V·s is obtained.
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