Electrochemical behavior and polishing properties of silicon wafer in alkaline slurry with abrasive CeO₂

来源期刊：中国有色金属学报(英文版)2008年第1期

论文作者：宋晓岚 徐大余 张晓伟 史训达 江楠 邱冠周

文章页码：178 - 182

Key words：Chemical mechanical polishing(CMP); material removal rate(MRR); electrochemical characteristics; slurry; abrasive CeO2

Abstract: The electrochemical behavior of silicon wafer in alkaline slurry with nano-sized CeO₂ abrasive was investigated. The variations of corrosion potential (φ_corr) and corrosion current density (J_corr) of the P-type (100) silicon wafer with the slurry pH value and the concentration of abrasive CeO₂ were studied by polarization curve technologies. The dependence of the polishing rate on the pH and the concentration of CeO₂ in slurries during chemical mechanical polishing(CMP) were also studied. It is discovered that there is a large change of φ_corr and J_corr when slurry pH is altered and the J_corr reaches the maximum (1.306 μA/cm²) at pH 10.5 when the material removal rate(MRR) comes to the fastest value. The J_corr increases gradually from 0.994 μA/cm² with 1% CeO₂ to 1.304 μA/cm² with 3% CeO₂ and reaches a plateau with the further increase of CeO₂ concentration. There is a considerable MRR in the slurry with 3% CeO₂ at pH 10.5. The coherence between J_corr and MRR elucidates that the research on the electrochemical behavior of silicon wafers in the alkaline slurry could offer theoretic guidance on silicon polishing rate and ensure to adjust optimal components of slurry.

基金信息：the International Cooperation of Science and Technology Ministry of China
the National Undergraduate Innovative Experiment Plan