Photoluminescence properties of ZnSe/SiO2 composite thin films prepared by sol-gel method

来源期刊:中国有色金属学报(英文版)2006年第z1期

论文作者:姜海青 车俊 姚熹

文章页码:266 - 269

Key words:ZnSe/SiO2 composite thin films; sol-gel method; photoluminescence; optical constant

Abstract: ZnSe/SiO2 composite thin films was prepared by sol-gel method. XRD results indicate the phase structure of ZnSe particles embedded in ZnSe/SiO2 composite thin films is sphalerite (cubic ZnS). Spectroscopic ellipsometers were used to investigated the dependences of ellipsometric angle with wavelength of ZnSe/SiO2 composite thin films. The optical constant, thickness, porosity and the concentration of ZnSe of ZnSe/SiO2 thin composite films were fitted according to Maxwell-Garnett effective medium theory. The thickness of ZnSe/SiO2 composite thin thin films was also measured through surface profile. The photoluminescence properties of ZnSe/SiO2 thin composite thin films was investigated through fluorescence spectrometer. The photoluminescence results show that the emission peak at 487 nm (2.5 eV) is excited at 395 nm corresponds to the band-to-band emission of sphalerite ZnSe crystal(2.58 eV). The strength free exciton emission and other emission peaks correlating to ZnSe lattice defect were also observed.

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