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Trans. Nonferrous Met. Soc. China 22(2012) s722-s728 Microstructure evolution and mechanical properties of Ti-B-N coatings deposited by plasma-enhanced chemical vapor deposition Jung Ho SHIN1,2... wafer by plasma-enhanced chemical vapor deposition (PECVD) technique using a gaseous mixture of TiCl4, BCl3, H2, N2, and Ar. By virtue of X-ray diffraction analysis, X-ray photoelectron spectroscopy......
Growth of straight carbon nanotubes by simple thermal chemical vapor deposition ZOU Xiao-ping(邹小平) 1,2,3,4, H. ABE 3, T. SHIMIZU 3, A. ANDO 5, H. TOKUMOTO 3,6, ZHU Shen-ming(朱申敏)4, ZHOU Hao-shen(周... April 2006; accepted 25 April 2006 Abstract: Straight carbon nanotubes (CNTs) were achieved by simple thermal chemical vapor deposition(STCVD) catalyzed by Mo-Fe alloy catalyst on silica supporting......
Structural and optical properties of tellurium films obtained by chemical vapor deposition(CVD) MA Yu-tian(马玉天)1, 2,GONG Zhu-Qing(龚竹青)1, XU Wei-Hong(徐卫红)1, HUANG Jian(黄 坚)1 1. School...; Abstract: Tellurium thin films were prepared by the chemical vapor deposition method......
of Materials Science and Engineering, Southwest University of Science and Technology,Mianyang 621010, China)Abstract:Diamond films were prepared by hot filament chemical vapor deposition (HFCVD) in a gas.... The diamond films with excellent performance have a broad application prospect in microelectromechanical systems (MEMS).Key words:ultrananocrystalline diamond; hot filament chemical vapor deposition (HFCVD......
of Crystal Growth, 1998, 183: 338-346. [28] HAYASHI Y, DRAWL W, MESSIER R. Temperature dependence of nucleation density of chemical vapor deposition diamond [J]. Japanese Journal of Applied Physics, 1992... influences on hot filament chemical vapor deposition (HFCVD) diamond films growth on inner hole surfaces of WC-Co substrates mainly include the substrate temperature (t), carbon content (φ), total pressure (p......
)Abstract:InGaAs high electron mobility transistors (HEMTs) on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition (MOCVD). room temperature Hall... encouraging toward manufacturing InP-based HEMT by MOCVD.Key words:metamorphic device; mental organic chemical vapor deposition; high electron mobility transistors; InP substrate; InGaAs......
characterizations [J]. Carbon, 1997, 35(10/11): 1599-1611. [3] DELHA?S P. Chemical vapor deposition and infiltration processes of carbon materials [J]. Carbon, 2002, 40(5): 641-657. [4] HOUDAYER M, SPITZ J... Science and Manufacturing, 2005, 36(11): 1494-1498. [9] NORINAGA K, DEUTSCHMANN O, H?TTINGER K J. Analysis of gas phase compounds in chemical vapor deposition of carbon from light hydrocarbons [J......
in chemical vapor deposition (CVD) diamond film growth reactor was reviewed. The gas phase reaction model, reaction mechanism and all kinds of numerical simulation methods in different types of reactors... growth by chemical vapor deposition on diamond (100), (111), and (110) surfaces: Carbon-13 studies[J]. J Appl Phys, 1991, 70(3): 1695-1705. [11] Matsui Y, Yabe H, Hirose Y. The growth mechanism......
A Study on Medium Temperature Chemical Vapor Deposition (MT-CVD) Technology and Super Coating Materials LI Jian-ping1,ZENG Xiang-cai1,MA Wen-cun1,GAO Jian1 (1.Chengdu Tool Institute, Chengdu 610051... of carbide inserts with super coating layers were gained by using the improved high temperature chemical vapor deposition (HTCVD) equipment and HT-CVD, in combination with MT-CVD technology. 关键词:MT-CVD......
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