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Short communication Linear analysis on the stability of lanthanide vapor complexes LnAl3Cl12(Ln=LatoLu)WANG Linshan and WANG YuhongDepartment of Chemistry, Northeastern University, Shenyang 110004... temperature and pressure ranges (588-851 K and 0.01-0.22 MPa). Stability constants Kθ of lanthanide complexes LnAl3Cl12 were calculated from the measurements. The values of Ig Kθ change linearly......
Metallurgy, Central South University, Changsha 410083, China ) Abstract:The effects of deposition temperature and pressure on the diffusion behavior of TaCl5 vapor in the perform pores... temperature and variation of pressure. In addition, the infiltration depth of TaC in 2.5D needle-punctured felts is less than that in low-density felts. Key words:TaC; chemical vapor infiltration; pore......
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in Zn-Mg coatings. Key words: magnesium; zinc; corrosion resistance; physical vapor deposition; coating; electrochemistry 1 Introduction Metallic coatings containing zinc (Zn) have been commercially.... After the substrate was placed on the cathode, the chamber was pumped up to pressure of 6.67×10-4 Pa. The substrates were pre-cleaned to remove the surface contamination using argon ion for 5 min......
prepared by chemical vapor deposition(CVD) alternated with slurry painting were applied on C/C-SiC composites, respectively. The oxidation of three samples at 1 500 ℃ was compared. The results show... Si-Mo layer. Porous Si-Mo layer improves the thermal shock resistance of the coating.
Key words: C/C-SiC composites; oxidation protective coating; slurry painting; chemical vapor deposition
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Microstructure and giant baro-caloric effect induced by low pressure in Heusler Co51Fe1V33Ga15 alloy undergoing martensitic transformationKai Liu1,2,3,Hai Zeng1,2,Ji Qi4,5,Xiaohua Luo1,Xuanwei... to replace the current vapor compression refrigeration in consideration of environmental-friendliness and energy-saving.However,both high driven field and small thermal changes in all of these caloric......
1.0 μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor depositionGAO Cheng(高成)1, LI Hai-ou (李海鸥)2, HUANG Jiao-ying(黄姣英)1, DIAO Sheng-long(刁胜龙)1(1...)Abstract:InGaAs high electron mobility transistors (HEMTs) on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition (MOCVD). room temperature Hall......
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