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of germanium quenched form the melt under high pressure[J]. J Phys, 1995, 52(1): 3113-3118. [15] LIU R P, VOLKMANN T, HERLACH D. Undercooling and solidification of Si by electromagnetic levitation[J......
]. Journal of Crystal Growth, 1995, 148: 172-182. [5] BRUNCO D P, THOMPSON M O, HOGLUND D E, AZIZ M J, GOSSMANN H J. Germanium partitioning in silicon during rapid solidification [J]. Journal......
and gold from ore, and it is being exploited in the extraction of other base metals and rare noble metals, such as zinc, cobalt, nickel, molybdenum, gallium, germanium etc. In some cases it has been......
] Unnithan C H, Predeep P, Jayakumar S. Doping effect of copper in germanium tellurium semiconducting glass system[J]. Journal of Physics and Chemistry of Solids, 2003, 64: 707-709. [17] Mostafa S N......
leaching of laterites-A comprehensive model of a continuous autoclave[J]. Hydrometallurgy, 2000, 58(2): 89-101. [15] LIANG D, WANG J, WANG Y. Difference in dissolution between germanium and zinc during......
, 243: 71-79. [3] ZHANG D Q, NI Z M, SUN H W. Direct determination of parts-per-billion levels of germanium in botanical samples and coal fly ash by graphite furnace atomic absorption spectrometry[J......
]. Journal of Shanghai Jiaotong University, 1999, 33(2): 142-145. [7] HELLAWELL A. Growth and structure of eutectics with silicon and germanium[J]. Progress in Materials Science, 1970, 15: 3. [8] WANG W M......
, Science and Technology of Japan. References [1] TRUMBORE F A. Solid solubilities of impurity elements in germanium and silicon [J]. Bell System Technical Journal, 1960, 39: 206-233. [2] HANAZAWA K......
-forming precipitates in silicon [J]. Journal of Applied Physics, 1988, 63(9): 4444-4450. [13] Hall R N, Racette J H. Diffusion and solubility of copper in extrinsic and intrinsic germanium, silicon......
germanium [J]. Phys Status Solidi, 1966, 15: 627-637. [19] Park S M, Ikegami T, Ebihara K, Shin P K. Structure and properties of transparent conductive doped ZnO films by pulsed laser deposition [J......