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Silicon Epitaxial Wafer for X Band Double Read－type DDR IMPATT Diodes by Atmosphere／Low Pressure Growth Techniqt王向武,陆春一摘 要:ＳｉｌｉｃｏｎＥｐｉｔａｘｉａｌＷａｆｅｒｆｏｒＸＢａｎｄＤｏｕｂｌｅＲｅａｄ－ｔｙｐｅＤＤＲＩＭＰＡＴＴＤｉｏｄｅｓｂｙＡｔｍｏｓｐｈｅｒｅ／ＬｏｗＰｒｅｓｓｕｒｅＧｒｏｗｔｈＴｅｃｈｎｉｑｔＷａｎｇＸｉａｎｇｗｕａｎｄＬｕＣｈｕｎｙｉ王向武,陆春...关键词:......
堆垛缓冷对连铸坯中心偏析的影响沈世雕1,黄福祥1,陈书浩1,王新华1,王万军1(1.北京市北京科技大学 冶金与生态工程学院)摘 要:研究了轧制前堆垛缓冷处理对连铸坯中心偏析的影响.通过对试验铸坯横断面的低倍硫印检验和沿铸坯厚度方向上的化学分析以及对轧后钢板的断面组织观察,发现轧前堆垛缓冷处理减轻了铸坯中心碳偏析和轧后钢板带状组织.堆垛缓冷48 h的铸坯中心偏析级别由C类2.0下降到C类1.5;堆垛缓冷36 h的铸坯轧后钢板与堆垛缓冷24 h的试样相比,其断面带状组织明显减轻,且没有明显连续的珠光体带状组织.
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words: Al-Cu alloy; multi-axial compression deformation; subgrain; shear band 大块超细晶材料(UFG)晶粒的平均尺尺寸在0.1~1 μm之间,呈等轴状均匀分布,且以大角度晶界为主.这些微观组织特征决定其宏观上表现出优异的物理性能和力学性能[1-2].因此,UFG的制备方法一直以来都是材料领域的研究热点之一.UFG的加工主... deformation microstructures[J]. Materials Science and Technology, 1990, 6: 1039-1047. [15] HARREN S V, DEVE H E, ASARO R J. Shear band formation in plane strain compression[J]. Acta Metal, 1988, 36(9......
Improvements of Wavelength and Temperature Dependences of Faraday Rotation of Bismuth-Substituted Rare Earth Iron Garnet Single Crystals in Optical Communication Band黄敏,凌俐摘 要:band by combining two types of bismuth......
Luminescence tuning of Ce3+,Pr3+ activated(Y,Gd)AGG system by band gap engineering and energy transferYiyi Ou1,Weijie Zhou1,Fengkai Ma1,Chunmeng Liu1,Rongfu Zhou1,Fang Su1,Yan Huang2,Pieter... of band gap engineering and energy transfer on the luminescence properties of Ce3+or Pr3+ doped(Y,Gd)AGG systems,and analyze the underlying reasons for their different phenomena.By using VUV-UV......
Luminescence tuning of Ce3+,Pr3+ activated(Y,Gd)AGG system by band gap engineering and energy transferYiyi Ou1,Weijie Zhou1,Fengkai Ma1,Chunmeng Liu1,Rongfu Zhou1,Fang Su1,Yan Huang2,Pieter... of band gap engineering and energy transfer on the luminescence properties of Ce3+or Pr3+ doped(Y,Gd)AGG systems,and analyze the underlying reasons for their different phenomena.By using VUV-UV......
Effects of CeO2 on the XPS valence band spectra of coal under the combustion initialization stage at 400℃Cheng-lin Qi1,Jian-liang Zhang1,Chao Ma2,Gen-sheng Feng1,Zhong-ping Song11. State Key... with and without the addition of CeO2 , it can be seen that the C-C bond fractures first at 400℃, while the C-H energy-band takes electrons at the same time to be far away from the Fermi level, and the O2s......
Atomic-layer-deposited (ALD) Al2O3passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacksShuang Liang1,Gang He1,2,Die Wang1,Fen Qiao31. School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University2. Institute of Physical Science and Information Technology, Anhui University3. School of Energy & Power......
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