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Performance improvement of ZnO film by room-temperature oxygen plasma pretreatment ZHAO Ping(赵 平)1, XIA Yi-ben(夏义本)1, WANG Lin-jun(王林军)1, LIU Jian-min(刘健敏)1, XU Run(徐 闰)1... (XRD) patterns show that the c-axis orientation of ZnO film increases evidently after oxygen plasma pretreatment. The AFM and SEM measurements also show that the high c-axis orientation of ZnO film......
High-performance Sb:SnO2 Compact Thin Film Based on Surfactant-free and Binder-free Sb:Sn3O4 SuspensionJunhua Zhao1,Ruiqin Tan2,Ye Yang3,Wei Xu3,Jia Li3,Wenfeng Shen3,Guoqiang Wu1,Xufeng Yang1,Weijie... coating and rapid annealing processes,in which nanosheets were assembled into a compact structure via self-contracting high pressure.The mechanism of this compact thin film formation was further proposed......
with optical band gap Eg close to 1.4 eV. Key words: CuInS2 thin film; precursor; sulfurization; deposition sequence ..., investigations have been directed with much interest towards CuInSe2, CuInS2 and related quaternary compounds such as Cu(InGa)Se2 and CuIn(SSe)2 owing to their potential applications in thin film solar cells......
High quality thin film phosphors of Y2O3:Eu3+ deposited via chemical bath deposition王娇1,2,张志军1,郭向欣1,赵景泰1,陈昊鸿1,杨昕昕11. Key Laboratory of Transparent Opto-functional Inorganic Materials, Shanghai...-light-emitting Y2O3:Eu3+ thin film phosphors. Such films were obtained via chemical bath deposition on bare SiO2 glass substrates through heterogeneous nucleation with further heat treatment. Thin......
High quality thin film phosphors of Y2O3:Eu3+ deposited via chemical bath deposition王娇1,2,张志军1,郭向欣1,赵景泰1,陈昊鸿1,杨昕昕11. Key Laboratory of Transparent Opto-functional Inorganic Materials, Shanghai...-light-emitting Y2O3:Eu3+ thin film phosphors. Such films were obtained via chemical bath deposition on bare SiO2 glass substrates through heterogeneous nucleation with further heat treatment. Thin......
Growth of MgO Thin Film on Silicon Substrate by MOCVD鲁智宽,于淑琴,黄柏标,蒋民华,王弘,王晓临,黄平摘 要:<正> Highly oriented MgO(111)and MgO(100)thin films have been deposited on Si(111)and Si(100)substratesby using Low Pressure MOCVD(LPMOCVD).Magnesium 2,4-pentanedionate was used as the source ma-terial.The films have a very smooth surface morphology and optical......
Research on Performance of ZnS∶TbF3 Thin Film Electroluminescence Device 徐叙瑢1,杨胜1,何大伟1,王永生1,关亚菲1,权善玉1 (1.Institute of Optoelectronic Technology, Northern Jiaotong University, Beijing 100044, China... was reported. The characteristics of the ZnS∶TbF3 thin film electroluminescence devices, such as film characteristics of the ZnS∶Tb active layer, substrate temperatures during magnetron sputtering and Tb......
thin film prepared with different Ag doping amounts 根据功率因子关系式PF=α2σ,计算并作出了不同Ag掺杂量下制备的ZnSb基热电薄膜的功率因子随测试温度变化的关系曲线结果如图6所示.从图6可以看到,不同Ag掺杂量下制备的ZnSb基热电薄膜的功率因子整体上大于未掺杂的ZnSb热电薄膜的功率因子；随着测试温度的升高,未掺杂的ZnSb薄膜的功率因子...学报, 2016, 26(6): 1214-1221. CHEN Zhi-jian, LI Jian-xin, ZHOU Bai-yang, WEN Cui-lian. Thermoelectric properties of Mg2Si thin film prepared by magnetron sputtering based on composite target[J......
Ferroelectric properties of sol-gel derived Nd-doped SrBi4Ti4O15 thin films FAN Suhua1,WANG Peiji2,REN Yanxia3,ZHANG Fengqing1 (1.Department of Materials Science and Engineering, Shandong Jianzhu... bismuth titanate (SrBi4-xNdxTi4O15) ferroelectric thin films were fabricated using the sol-gel method on Pt/Ti/SiO2/Si substrates. The influence of Nd content on the microstructure and ferroelectric......
–AZO) semiconductor thin film material was deposited on both silicon and glass substrate by radio frequency(RF) sputtering at room temperature.Electrical properties and microstructure of Gd–AZO thin... spectrum implies the potential application for Gd–AZO to be used in transparent material field.Finally,bottom gate,top contact device structure thin film transistors(TFTs) with Gd–AZO thin film......
