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Gas sensitivity of indium oxide HUANG Shi-zhen1, 2, LIN Wei1, 2, CHEN Wen-zhe1, 2 1. Fujian Key Laboratory of Microelectronic IC, Fuzhou University, Fuzhou 350002, China; 2. College...; Abstract: The yellow indium oxide nanoparticles were prepared by sintering the white deposition......
Trans. Nonferrous Met. Soc. China 26(2016) 3292-3298 Effect of depressurizing speed on mold filling behavior and entrainment of oxide film in vacuum suction casting of A356 alloy Shan-guang LIU1,2... of Science and Technology, Zhangjiagang 215600, China Received 27 November 2015; accepted 18 April 2016 Abstract: The effect of depressurizing speed on mold filling behavior and entrainment of oxide film......
; (2) The formation of CeO2 is very important to improve the corrosion resistance of cerium conversion film because it is the most stable oxide of cerium... to the corrosion resistance of cerium conversion films because it is a stable oxide of cerium and is less soluble than magnesium compounds. The hydrated cerium oxide film is formed, which stifles further......
Oxidation Kinetics of (111) Silicon Monocrystal and Morphology of Oxide Film in Dry Oxygen Atmosphere李文超,樊自拴,孙贵如,秦福摘 要:<正> 1. Introduction Thermal oxidation of silicon monocrystalis a very important process in fabricationof metal--oxide--semiconductor (MOS) devices.In recent years it has received great atten-tion. Various proposals for oxidation......
Performance of La1-xSrxCr1-yMnyO3-δ anode materials for intermediate temperature solid oxide fuel cell CHEN Xiu-hua(陈秀华)1, MA Wen-hui(马文会)2, 3, YANG Bin(杨 斌)2, 3, DAI Yong-nian(戴永年)2, 3 1.... TPR result indicates that LSCM offers excellently catalytic performance. Key words: La1-xSrxCr1-yMnyO3-δ; anode materials; glycine nitrate process; intermediate temperature solid oxide fuel cells......
and electrochemical tests were also analyzed.The thicknesses of T5 and T6 oxide films are roughly 0.6 and1.0 μm,respectively.The components of oxide films mainly consist of O,Mg,Y,Nd,and Gd,and the T6 oxide film... that of the alloys.The specimens could be arranged in decreasing order of corrosion rates and corrosion current densities:T6 oxide film < T5 oxide film < T6 without oxide film < T5 without oxide film.The oxide......
-steady decrease and trend constant. Precursor film forms surrounding the wetting tip when wetting temperature is above 1163K. Formation of precursor film is related to the change of triple line... and reactivity. The kinetic relationship of spreading ratio with spreading time was also investigated. Key words: wetting; interfacial reaction; precursor film CLC number: TG113.26; TG139.8 Document......
Effect of Cr doping on secondary phases and electrical properties of zinc oxide ceramic thick film varistors JIANG Sheng-lin(姜胜林), ZHANG Hai-bo(张海波), XIE Tian-tian(谢甜甜), FAN Mao-yan(范茂彦), ZENG Yi... and Ga2O3 added as the donor can enhance the carrier density, decrease the resistivity, and improve the electrical properties of the film varistors in the large current rising region[8-9], while the doping......
Electrodeposited Ni, Fe, Co and Cu single and multilayer nanowire arrays on anodic aluminum oxide template Bobomurod HAMRAKULOV1, In-Soo KIM1, M. G. LEE1, B. H. PARK2 1. School of Advanced...; Abstract: The Ni, Fe, Co and Cu single and multilayer nanowire arrays to make perpendicular magnetic recording media were fabricated with nanoporous anodic aluminum oxide (AAO) templates from......
will float on the bismuth melting to form a dense layer of bismuth oxide film. The film is difficult to be vaporized, and its existence on surface will hinder the further evaporation of bismuth... formed on the bismuth melting surface obstructs both the further evaporation of bismuth and vapor oxidation. With the addition of carbon, the oxide film on the bismuth melting surface will be destroyed......
