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and semiconductor parameter tester. The results show that the thin film annealed at 710 °C exhibits a typical perovskite structure without predominant orientation and a smooth surface with evenly distributed grains. 2Pr value (67.4 μC/cm2 under 830 kV/cm) and the leakage current density (1.6×10-6 A/cm2 at 170 kV/cm) for BNKT15 thin film annealed at 710 °C are better than those for thin films annealed......
during the martensitictransformation. Key words:martensitic transformation; residual stress; TiNi; thin film; shape memory alloy; [全文内容正在添加中] ...EFFECT OF RESIDUAL STRESS ON THE MARTENSITIC TRANS- FORMATION OF SPUTTER-DEPOSITED SMA THIN FILMS D.Xu1,B.C.Cai1,L.Wang1 (1.Information Storage Research Center, Shanghai Jiao Tong University......
and further growth to form the thin film. The morphology, composition and microstructure of the film are characterized by SEM, XPS, XRD and HRTEM. The results show that the SiOx film comprises a majority...Analysis of the SiOx Film Microstructure on Al Substrate by APCVD Process WANG You-wen1,GAN Zheng-hao2,WO Yin-hua1,ZHANG Ji-liang1,LI Jian1 (1.Material Science and Engineering Department, Zhejiang......
Growth of MgO Thin Film on Silicon Substrate by MOCVD鲁智宽,于淑琴,黄柏标,蒋民华,王弘,王晓临,黄平摘 要:<正> Highly oriented MgO(111)and MgO(100)thin films have been deposited on Si(111)and Si(100)substratesby using Low Pressure MOCVD(LPMOCVD).Magnesium 2,4-pentanedionate was used as the source ma-terial.The films have a very smooth surface morphology and optical......
Ferroelectric properties of sol-gel derived Nd-doped SrBi4Ti4O15 thin films FAN Suhua1,WANG Peiji2,REN Yanxia3,ZHANG Fengqing1 (1.Department of Materials Science and Engineering, Shandong Jianzhu... bismuth titanate (SrBi4-xNdxTi4O15) ferroelectric thin films were fabricated using the sol-gel method on Pt/Ti/SiO2/Si substrates. The influence of Nd content on the microstructure and ferroelectric......
words:ferroelectric; SrBi2 Ta2O9 thin film; stability; forming gas; [全文内容正在添加中] ...THE STABILITY INVESTIGATION OF FERROELECTRIC SrBi2Ta2O9 THIN FILMS ANNEALED IN FORMING GAS A.D.Li1,N.B.Ming1,D.S.Wang1,Z.G.Liu1,D.Wu1,T.Yu1,A.Hu1 (1.National Laboratory of Solid State......
is commonly used in the activating treatment in EN procedure, and a thin layer of protective fluoride film forms on the magnesium base metal to reduce the oxidation of magnesium and the corrosion of EN plating... far little report on such subject. DING[11] investigated the composition and structure of fluoride film formed in different concentrations of HF and found that dense and thin film is obtained when......
Giant magnetostrictive thin film and its application Abstract: Giant magnetostrictive thin films present a new and interesting way to realize new actuator and sensor... and application of magnetostrictive thin films were introduced. Keyword: giant magnetostrictive; thin film; material; Received: 2000-06-28 在微机电, 微......
Engineering, University of New South Wales, Sydney 2052, Australia) Abstract: The solar cell light absorber Cu2ZnSnS4(CZTS) thin films were prepared by annealing precursor thin film in a sulfur atmosphere...-circuit current density of 16.75 mA/cm2, a fill factor of 0.47 and an efficiency of 5.18%,which demonstrates that the sol-gel technique is a successful method of preparing cheap thin film solar cells......
