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• Effects of B₂O₃-SiO₂ doping on electrical properties of Ba_0.65Sr_0.35TiO₃ ceramics

  来源： 《中国有色金属学报(英文版)2005年第2期》——章天金 江娟 张柏顺 顾豪爽 刘江华

  Article ID: 1003-6326(2005)02-0229-04 Effects of B2O3-SiO2 doping on electrical properties of Ba0.65Sr0.35TiO3 ceramics ZHANG Tian-jin(章天金), JIANG Juan(江 娟), ZHANG Bai-shun(张柏顺), GU Hao... decreases while the dielectric loss increases after doping. And as the glass content increases the dielectric constant decreases while the dielectric loss changes slightly. From the complex impedance......

• Creep behavior of SnAgCu solders with rare earth Ce doping

  来源： 《中国有色金属学报(英文版)2010年第3期》——张亮 薛松柏 皋利利 曾广 陈燕 禹胜林 盛重

  Creep behavior of SnAgCu solders with rare earth Ce doping ZHANG Liang(张 亮)1, XUE Song-bai(薛松柏)1, GAO Li-li(皋利利)1, ZENG Guang(曾 广)1, CHEN Yan(陈 燕)2, YU Sheng-lin(禹胜林)1,3, SHENG Zhong(盛 重)1 1...;                  Abstract: Extensive testing was carried out to study the effects of rare earth Ce doping......

• 水热法制备Y₂O₃:Eu及其发光性能的研究

  来源： 《有色金属科学与工程2010年第1期》——廖金生 徐鹏 邱报

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• Effect of substrate doping on threshold voltages of buried channel pMOSFET based on strained-SiGe technology

  来源： 《中南大学学报(英文版)2014年第6期》——WANG Bin(王斌) ZHANG He-ming(张鹤鸣) HU Hui-yong(胡辉勇) ZHANG Yu-ming(张玉明) ZhOU Chun-yu(周春宇) LI Yu-chen(李妤晨)

  Effect of substrate doping on threshold voltages of buried channel pMOSFET based on strained-SiGe technologyWANG Bin(王斌), ZHANG He-ming(张鹤鸣), HU Hui-yong(胡辉勇), ZHANG Yu-ming(张玉明), ZhOU Chun-yu(周春宇... of substrate doping on the threshold voltages of buried channel pMOSFET based on strained-SiGe technology was studied. By physically deriving the models of the threshold voltages, it is found......

• Conductivity of cerium oxides doped by trivalent cations

  来源： 《中国有色金属学报(英文版)2007年增刊第1期》——张鸿 汪健 王申存 李志成

  ;             Abstract: For the doping technique with single dopant of Sb2O3, Ga2O3.... Ionic radii and association enthalpies of dopants were taken account for different conductivities and activation energies of the CeO2-based oxygen-ion conductors. Key words: cerium oxides; doping......

• Growth of CuI buffer layer prepared by spraying method

  来源： 《中国有色金属学报(英文版)2011年第2期》——阎有花 刘迎春 方玲 卢志超 李正邦 周少雄

  method with using acetonitrile as solvent. The influence of iodine doping concentration in acetonitrile solution on the structure, topographic and optical properties of CuI thin films... that the microstructure of CuI films depended on the relative amount of doping iodine in the solution. When the iodine doping amount in acetonitrile solution was 0.025 g, the film was uniform and compact......

• Influence of doped Ag⁺ on multifunction characteristics in SrTiO₃ ceramics

  来源： 《中国有色金属学报(英文版)2000年第1期》——徐庆 陈文 袁润章

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• Mo的掺杂方式对TiO₂光催化活性的影响

  来源： 《中国有色金属学报2004年第3期》——杨莹 李新军 陈俊涛 王良焱 何明兴

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• Li-Mn-Al-O锂离子正极材料的合成及其性能

  来源： 《中南大学学报(自然科学版)2006年第5期》——李义兵 陈白珍 胡拥军 李改变 陈亚 金基明

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• Microstructure and Anticorrosion Property of AT13 Coatings Made by Combination of Nanoparticles Doping and Plasma Spraying Technique

  来源： 《材料热处理学报2004年第5期》——LUO Ping-ya LI Chun-fu HE Tao-e ZHANG Ying WANG Bin DAI Jia-lin

  Microstructure and Anticorrosion Property of AT13 Coatings Made by Combination of Nanoparticles Doping and Plasma Spraying Technique LUO Ping-ya1,LI Chun-fu1,HE Tao-e2,ZHANG Ying2,WANG Bin2,DAI... nm in coatings and the fracture type of coatings was the ductile trans-granular fracture. 关键词:nanoparticle doping; plasma spraying; Al2O3+13wt％TiO2; coatings; composition and structure; [全文内容正在添加中] ......