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螯合剂与氧化剂协同降低CMP中Co/Cu电偶腐蚀李祥州1,2,潘国峰1,2,王辰伟1,2,郭学海1,2,何平3,李月1,21. 天津市电子材料与器件重点实验室2. 河北工业大学电子信息工程学院3. 河北工业大学计算机科学与软件学院摘 要:钴(Co)作为10 nm及以下技术节点的铜互连极大规模集成电路(GLSI)的新型阻挡层材料,在阻挡层化学机械抛光(CMP)中易与铜(Cu)发生电偶腐蚀.本文采用电化学,CMP,静态腐蚀实验以及扫描电镜(SEM)表征方法,研究了弱碱性抛光液中螯合剂和氧化剂在Co/Cu电偶腐蚀中的协同作用.研究表明:抛光液中的氧化作用,使得Co和Cu表面生成一层由氧化物及氢氧化物组成的钝化膜,抑制了Co和Cu的静态腐蚀;多羟多胺螯合剂浓度增加,抛光液pH升高,Co和Cu表面钝化膜的生成加......
Effect of pouring temperature on semi-solid slurry of A356 Al alloy prepared by weak electromagnetic stirring LIU Zheng(刘 政) 1, 2, MAO Wei-min(毛卫民)1, ZHAO Zheng-duo(赵振铎)1 1...; Abstract: The semi-solid slurry of A356 Al alloy was manufactured by low superheat pouring and weak electromagnetic stirring. The effects of pouring temperature on the slurry......
Filling ability of semi-solid A356 aluminum alloy slurry in rheo-diecastingYuelong Bai~(1,2)Weimin Mao~(1)Songfu Gao~(1)Guoxing Tang~(1)Jun Xu~(2) (1)School of Materials Science... 100088,China摘 要:<正>The effects of slurry temperature,injection pressure,and piston velocity on the rheo-filling ability of semisolid A356 al- loys were......
采用超声雾化液化学机械抛光(CMP)氧化锆陶瓷的材料去除特性李庆忠,夏明光,施卫彬江南大学机械工程学院摘 要:采用浸泡腐蚀法研究了雾化抛光液与钇稳定氧化锆陶瓷(Y-TZP)之间的化学反应对其表面硬度的影响,通过雾化施液CMP抛光工艺分别在纯机械,纯化学及化学机械作用下进行雾化CMP试验,分析讨论了雾化CMP过程中原子级的材料去除特性;最后,研究了化学腐蚀软化层对氧化锆陶瓷材料去除速率及表面质量的影响.试验结果表明,精细雾化液CMP过程中在基片表面形成一层硬度比基体材料小的软质层,材料去除主要是化学和机械共同作用的结果,其去除率超过材料总去除率的94%,且化学机械交互作用的动态平衡点与抛光过程中工艺参数的设置有关,选择适当的工艺参数是实现对材料的高效去除和获得高质量表面的关键.关键词:Y......
Semi-solid slurry preparation and rolling of 1Cr18Ni9Ti stainless steelWeimin Mao, Aimin Zhao, Dong Yun, Leping Zhang, and Xueyou ZhongMaterials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China摘 要:<正> The preparation and rolling of the semi-solid slurry 1Cr18Ni9Ti stainless steel were researched......
Preparation of semi-solid AlSi7Mg alloy slurry with big capabilityLI Sha and MAO Weimin School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083,China摘 要:Semi-solid AlSi7Mg alloy slurry was prepared by low superheat pouring and weak traveling-wave electromagnetic stirring.The effects of pouring temperature......
超精密加工中铜表面CMP后残余金属氧化物的去除顾张冰1,2,牛新环1,3,刘玉岭1,2,高宝红2,王辰伟2,邓海文1,21. 河北工业大学电子信息工程学院2. 河北工业大学微电子技术与材料研究所3. 天津市电子材料与器件重点实验室摘 要:多层铜布线经过化学机械平坦化(CMP)后,铜线条表面会残留CuO颗粒,它会对器件的稳定性有很大的影响,因此在CMP后清洗时必须把CuO从铜表面去除.这就要求有一种可以有效去除铜表面CuO的清洗剂.本研究中提出的新型复合清洗剂主要解决两个问题:一个是CuO的去除,另一个是防止清洗液对铜表面造成腐蚀.清洗剂的主要成分有两种,一种是FA/OⅡ型碱性螯合剂,它主要用来去除CuO,另一种是FA/OI型表面活性剂,它主要用来解决铜表面的腐蚀问题.通过在铜光片的表面生成氧化铜膜层......
" name="ChDivSummary">The electrochemical behaviors of n-type silicon wafers in silica-based slurry were investigated, and the influences of the pH value and solid content of the slurry......
of slurry shield tunneling using fluid-solid coupling theory DENG Zongwei1, WU Zhenzhi2, CAO Hao3, SHEN Pinghuan2 (1. School of Civil and Engineering, Hunan City University, Yiyang 413000, China; 2... on the principle that slurry shield maintaining the stability of tunnel face, the micro mechanism of slurry infiltration was explored. The ground surface settlement due to slurry infiltration......
Rheo-squeeze casting of semi-solid A356 aluminum alloy slurry MAO Wei-min(毛卫民), ZHENG Qiu(郑 秋), ZHU Da-ping(朱达平) School of Materials Science and Engineering, University of Science and Technology... aluminum alloy slurry was investigated, then the slurry was squeeze-cast. The results show that when the pouring temperatures are properly above the liquidus line, for example 630-650 °C, the slurry......