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J. Cent. South Univ. Technol. (2008) 15: 449-453 DOI: 10.1007/s11771-008-0084-x Photoluminescence properties of ZnO thin films prepared by DC magnetron sputtering YANG Bing-chu(杨兵初), LIU Xiao-yan...; Abstract: ZnO thin films were prepared by direct current(DC) reactive magnetron sputtering under different oxygen partial pressures......
STUDY ON Ni-Cr SYSTEM SOLAR SELECTIVE THIN FILMS PREPARED BY MAGNETRON REACTIVE SPUTTERING PROCESS H.Shen1,B.W.Wang1 (1.Guangzhou Institute of Energy Conversion,The Chinese Academy of Sciences,Guangzhou 510070,China) Abstract:Ni-Cr System solar selective thin solid films were prepared by d.c. magnetron reactivesputtering under the atmosphere of O2 and N2. Ni-Cr alloy was chosen......
J. Cent. South Univ. Technol. (2010) 17: 1144-1147 DOI: 10.1007/s11771-010-0610-5 Low temperature Raman study of PrCoO3 thin films on LaAlO3 (100) substrates grown by pulsed laser deposition... National University, Changwon 641-773, Korea ? Central South University Press and Springer-Verlag Berlin Heidelberg 2010 Abstract: Thin films of PrCoO3 were deposited on LaAlO3 substrates by pulsed......
Microstructure Characterization of Sol-gel Prepared MoO3-TiO2 Thin Films for Oxygen Gas Sensors () 摘要:Binary metal oxide MoO3-TiO2 films have been prepared using the sol-gel technique. The thin... deposited on sapphire substrates with interdigital electrodes on the front-side and a Pt heater on the backside. The O2 gas sensing properties of MoO3-TiO2 thin films are discussed. 关键词:Sol-gel......
Enhanced adhesion of Cu-W thin films by ion beam assisting bombardment implanting ZHOU Ling-ping(周灵平)1, 2, WANG Ming-pu(汪明朴)1, WANG Rui( KKKkkkkk(王 瑞)2, LI Zhou(李 周)1, ZHU Jia-jun(朱家俊)2, PENG... of the substrates surface treating technique on the adhesive strength of Cu-W thin films were studied. It is found that the technique of ion beam assisting bombardment implanting of W particles can remarkably......
Structure and magnetic properties of columnar Fe-N thin films deposited by direct current magnetron sputtering JIA Hui(贾 辉)1, 2, WANG Xin(王 欣)2, PANG Shao-ping(庞绍平)3, ZHENG Wei...; Abstract: Columnar Fe-N thin films with thickness......
Influence of Lanthanum on Fluorescence Properties of Ag-BaO Thin Films 吴锦雷1,许北雪1 (1.Department of Electronics, Peking University, Beijing 100871, China) Abstract:Ag-BaO thin films doped with lanthanum were prepared by vacuum deposition. Compared with the normal Ag-BaO thin film, there is almost no change with the shape and the peak site of the fluorescence spectrum; however, fluorescence......
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Dielectric thin films for GaN-based high-electron-mobility transistorsYan-Rong Li,Xing-Zhao Liu,Jun Zhu,Ji-Hua Zhang,Lin-Xuan Qian,Wan-Li ZhangState Key Laboratory of Electronic Thin Films... thin films on the performance of Ga N-based high-electron-mobility transistors(HEMTs) were reviewed in this work. Firstly, the nonpolar dielectric thin films which act as both the surface passivation......
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