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SUBSTRATE EFFECT ON HYDROGENATED MICROCRYSTALLINE SILICON FILMS DEPOSITED WITH VHF-PECVD TECHNIQUE H.D. Yang1 (1.Department of Electronic Engineering, Jinan University, Guangzhou 510632, China) Abstract:Raman spectra and scanning electron microscope (SEM) techniques were used to determine the structural properties of microcrystalline silicon (μc-Si:H) films deposited on different substrates......
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ANTIMONY INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON I. Gordon1,O. Van Der Biest2,H.Z. Li3,Y. Wang4,P. Schattschneider5,G.M. Wu6,C.N. Yu4 (1.Development of Technique, Interuniversity Micro...) amorphous silicon can be observed on sapphire substrates. Very large crystalline regions up to several tens of micrometers can be formed. The Si diffraction patterns of the area of crystallization can......
Trans. Nonferrous Met. Soc. China 22(2012) 2548-2553 Preparation, microstructure and dislocation of solar-grade multicrystalline silicon by directional solidification from metallurgical-grade silicon SU Hai-jun, ZHANG Jun, LIU Lin, FU Heng-zhi State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China Received 9 July 2012; accepted 3 September......
Vacuum distillation refining of metallurgical grade silicon (Ⅱ)--Kinetics on removal of phosphorus from metallurgical grade silicon MA Wen-hui(马文会)1, 2, WEI Kui-xian(魏奎先)1, 2, YANG Bin(杨 斌)1, 2...: The kinetics on vacuum refining process of metallurgical grade silicon was studied using maximum evaporation rate, critical pressure and mean free path of phosphorus in the metallurgical grade silicon......
Annealing behaviors of vacancy in varied neutron irradiated Czochralski silicon CHEN Gui-feng(陈贵锋), LI Yang-xian(李养贤), LIU Li-li(刘丽丽), NIU Ping-juan(牛萍娟), NIU Sheng-li(牛胜利... complex (VO) in varied dose neutron irradiated Czochralski silicon: (S1 5×1017 n/cm3 and S2 1.07×1019 n/cm3) were studied. The results show that the VO is one of the main defects formed in neutron......
; 文献标识码:A Extraction of silicon from laterite-nickel ore by molten alkali MU Wen-ning, ZHAI Yu-chun, LIU Yan (School of Materials and Metallurgy, Northeastern University, Shenyang 110004, China) Abstract: The effects of reaction temperature, reaction time, mass ratio of alkali to ore, and agitation speed on the extracting ratio of SiO2 during the process of extracting silicon from......
Experimental investigation of laser surface processing of flexure silicon nitride ceramic SUN Li1, A. P. MALSHE1, JIANG Wen-ping1, P. H. MCCLUSKEY2 1. Department of Mechanical Engineering... have significant effects on fracture behavior of flexure Si3N4 ceramic. Key words: Si3N4; silicon nitride ceramic; laser surface processing; surface integrity; flexural strength; fracture origin 1......
="ChDivSummary"><正> The properties of the carbon contaminated silicon epitaxial layer and its surface have been studied by means of JAMP-10Auger electron microprobe and JEM-2000FX transmission scanning electron microscope.The results show that the fog defectson the surface are due to carbon contamination.The existence of SiC in the silicon epitaxial layer has been identified by the elec-tron......
Electrochemical behaviors of silicon wafers in silica slurryXiaolan Song1), Haiping Yang1), Xunda Shi2), Xi He1), and Guanzhou Qiu1) 1) Department of Inorganic Materials, School of Minerals Processing and Bioengineering, Central South University, Changsha 410083, China 2) Silicon Wafer Manufacture Department, Grinm Semiconductor Materials Co. Ltd., Beijing 100088, China摘 要: <上一页 1 2 3 4 5 6 7 8 9 10 ... 339 下一页 >