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University of Chemical Technology, Beijing 100029, China摘 要:The Indium tin oxide(ITO) thin film possesses excellent photoelectric properties that enable... to the ITO precursor slurry.The influences of surfactants on the structural and photoelectric properties of ITO film samples were investigated.XRD patterns indicated that surfactant monoethanolamine......
ITO导电薄膜的用途和制备方法张树高,黄伯云,方勋华摘 要:本文综述了ITO薄膜的应用领域和制备工艺.ITO薄膜主要用于光电器件中,例如用于液晶显示(LCD).制造ITO薄膜的工艺方法很多,本文综述了磁控溅射法,CVD法,喷雾热分解法和溶胶-凝胶法4种制膜工艺.关键词:ITO薄膜;应用;制备工艺;......
微波烧结制备ITO靶材的工艺袁振1,易健宏1,孙本双2,钟景明21. 中南大学粉末冶金国家重点实验室2. 中色(宁夏)东方集团有限公司摘 要:采用单相ITO(indium tin oxide,铟锡氧化物)复合粉末,经过压制成形后,在纯氧气氛下微波烧结制备ITO靶材,研究烧结温度,保温时间和压制压力等主要工艺参数对ITO靶材致密化的影响.结果表明:靶材的相对密度随烧结温度升高而增大;在1 600℃烧结时,靶材的相对密度随保温时间增加先增大后减小,在保温1.5 h时相对密度达到最大值(98.67%),高温长时间烧结对ITO靶材的致密化不利.微波烧结的ITO靶材显微组织均匀,晶粒尺寸较均匀,约为6~8μm.不同温度下制备的ITO靶材均无SnO2相析出,仍是单一的固溶体相,不存在第二相.关键词......
and Technology, Changsha 410004, China Received 12 October 2012; accepted 11 April 2013 Abstract: A thin layer of TiO2 film was deposited on ITO surface via the liquid phase deposition (LPD) process... ITO electrode as substrate to deposit TiO2 film by the LPD process. The photoelectrochemical measurements indicated that the obtained TiO2/ITO film electrode had high PEC activity. Considering......
ITO粉及ITO靶材中铟的测定-EDTA容量法 张红梅1,陈锐1 (1.西北稀有金属材料研究院,宁夏,石嘴山,753000) 摘要:采用EDTA容量法测定ITO粉及ITO靶材中的铟含量, 方法变异系数0.43%, 回收率在97%~101%之间, 符合分析要求. 精度符合分析要求, 结果令人满意. 关键词:EDTA容量法; 铟; ITO粉及ITO靶材; [全文内容正在添加中] ......
ITO靶材的断口分析曾纪术,陈锦全,杨眉,吴伯增广西华锡集团股份有限公司摘 要:对国产与日本产两种ITO靶材进行全面的分析对比,并对ITO靶材的断口形貌与靶材黑化结瘤之间的关系进行了探讨.结果表明,国产靶材与日本靶材的相对密度,电阻率,失氧率等参数比较接近,二者均为单一晶相的固溶体.国产靶材的断面为"解理+韧窝"的脆-韧混合断裂,断裂面晶界上出现了粒径较大的无规则颗粒物;而日本靶材断面为解理脆性断裂,断裂面晶界清晰,无颗粒物出现.关键词:ITO靶材;断口;混合酸;结瘤;......
Bi-Cu film deposition in aqueous solutions Hitoshi WADA1, Yasuhiro NISHISAKA2, Ryoichi ICHINO2, Masazumi OKIDO2 1. Taiho Kogyo Co. Ltd., Hosoya-cho, Toyota-City, Aichi. 471-8502, Japan...; Abstract: The relatively uniform bismuth-copper film......
ITO nano-powders prepared by microwave-assisted co-precipitation in aqueous phase ZHU Xie-bin(朱协彬), JIANG Tao(姜 涛), QIU Guan-zhou(邱冠周), HUANG Bai-yun(黄伯云) School of Minerals Processing... PEG-6000 into the mixture of InCl3 solution and SnCl4 solution, and dropping the ammonia solution with the density (volume ratio) of 1?0 to 1?4, ITO precursor was prepared at different reaction system......
电弧气化法制备纳米ITO粉末及高密度ITO靶的研制 张雪凤1,王政红1,邢朋飞1,潘震2 (1.中国船舶重工集团公司第七二五研究所,河南,洛阳,471039;2.广州广船国际股份有限公司军代表室,广东,广州,510000) 摘要:以纯度为99.99%的纯金属In和Sn为原料,采用电弧气化法制备了单一立方In2O3结构的纳米ITO合金粉末,所制备的粉末以四方和类球形两种形貌存在,粒度主要位于30~70nm,分散性良好;并在此基础上采用常压烧结制备了相对密度高达99.74%,平均电阻率达到1.52×10-4Ω·cm,结构成份均匀,晶粒尺寸5~10μm左右的超高密度ITO靶材. 关键词:电弧气化法; 纳米; ITO粉; ITO靶; [全文内容正在添加中] ......
, independent of substrate type and temperature. The enrichment of Sn on surface and In in body of ITO films are also revealed. And, the oxygen deficient regions exist both in surface layer and film body...Crystallization and Conductivity Mechanism of ITO Films on Different Substrates Deposited with Different Substrate Temperatures刘静China Building Materials Academy摘 要:
