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Diffusion bonding of Al alloy to Al2O3 ceramicFENG Ji-cai(冯吉才), WANG Da-yong(王大勇), LI Zhuo-ran(李卓然), LIU Hui-jie(刘会杰)(National Key Laboratory of Advanced Welding Production Technology,Harbin Institute of Technology, Harbin 150001, China)Abstract:A layer of Cu was sintered on the surface of Al2O3 ceramic before bonding, and then diffusion bonding technology was applied to bond Al2O3/Cu to Al......
in Teflon-lined autoclave at 120 °C after pre-depositing by dip-coating at room temperature. No visible cracks, pinholes or other defects were observed on the membrane layer. The gas separation studies... an increase with the increase of temperature. This different behaviour of CO2 was reported by ZHAO et al [43]. The permeance of gas depends on the relative values of activation energy for diffusion......
to the catalytic effect of manganese oxide for OR reaction. Key words: oxygen reduction; manganese oxide; gas diffusion electrode; AC impedance gas diffusion electrodes[11-14]. In our previous paper, we studied the OR mechanism on Teflon bonded carbon electrode in alkaline electrolyte[15]. It was found......
at 950 °C and 15 MPa for 100 min, and the microstructure and mechanical properties of the resulting joints were investigated. The composition of the diffusion layer is B2/discontinuous α/α2 layer/necklace...; interface; diffusion layer 1 Introduction Due to their low weight, high strength, low thermal expansion, and excellent creep/corrosion resistance, titanium alloys, such as Ti-6Al-4V, have been......
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concentration depth profiles in the diffusion zone of titanized layers were carried out. The effect of process parameters such as time and temperature on the kinetics of layer growth on steel surface...Diffusion Carbide Layers, Formed on the Surface of Steel in the Vacuum Titanizing Process KASPRZYCKA Ewa1,NAKONIECZNY Aleksander1,BABUL Tomasz1,SENATORSKI Jan1 (1.Institute of Precision Mechanics......
Effect of alternative magnetic field on the diffusion layer growth in Al/Zn coupleLIU Xiaotao, CUI Jianzhong, WU Xiaoming, GUO Yanhui, and ZHANG Jun The Key Laboratory of Electromagnetic Processing... on the growth of the diffusion layer in Al-Zn diffusion couple was studied. The thickness of the diffusion layer was examined. The results show that the alternative magnetic field increases the thickness......
code: A 1 INTRODUCTION Diffusion in liquid in presence of multi-components is common in engineering practice, for example, the separation operation as liquid-liquid extraction, gas absorption... the effective diffusivities of gas in porous media. Most of gas-solid heterogeneous noncatalytic reactions in metallurgy are associated with the intraparticle diffusion of ternary gases. Although the metallurgy......
rule of sub-micron. The achievement of the discrete Ge mole fraction in the SiGe layer is a key engineering in low-temperature SiGe epitaxial growth using HVCVD. The pre-flow of GeH4 gas enhanced the Ge mole fraction and SiGe layer thickness. In addition, the Ge mole fraction and SiGe layer thickness increases with the gas ratio of GeH4/SiH4 + GeH4, process temperature, and gas flow time. However......
Mg alloy surface alloying layer fabricated through evaporative pattern casting technology CHEN Dong-feng(陈东风), DONG Xuan-pu(董选普), ZHANG Xiong(张 雄), FAN Zi-tian(樊自田) State Key Laboratory... factors of surface alloying layer by evaporative pattern casting technology were investigated. A certain thickness alloying layer was formed on the surface of Mg-alloy matrix when the pouring temperature......