共搜索到3995条信息，每页显示10条信息，共400页。用时：0小时0分0秒329毫秒
DEPOSITION OF TiBN HARD FILMS ON HOT-WORKING-STEEL DIES FOR ALUMINIUM EXTRUSION VIA A DUPLEX PROCESS K.MUller1 (1.Forschungszentrum Stranpressen, TU Berlin, 13355 Berlin, Germany) Abstract:Hot..., not only the surface quality of the extrudedproduct, but also the lifetime of the dies decreases. Deposition of TiBN hard films onthe die bearing could improve the die performance. Treatment should......
Deposition of TiN/TiAlN multilayers by plasma-activated EB-PVD:tailored microstructure by jumping beam technologyGuo-Yuan Yang1,Hui Peng1,2,3,Hong-Bo Guo1,2,3,Sheng-Kai Gong1,2,31. School... and Performance (Ministry of Education),Beihang University摘 要:Plasma-activated electron beam-physical vapor deposition(EB-PVD)was used for depositing nitride multilayer......
Enhanced deposition of Zn O films by Li doping using radio frequency reactive magnetron sputteringLiang-xian Chen1,Sheng Liu1,Cheng-ming Li1,Yi-chao Wang2,Jin-long Liu1,Jun-jun Wei11. Institute... for each deposition process. The results demonstrate that the enhanced Zn O films are obtained via Li doping. The average deposition rate for doped Zn O films is twice more than that of the undoped films......
Influence of InAs deposition thickness on the structural and optical properties of InAs quantum wiresYuanli Wang1), Hua Cui2), Wen Lei1), Yahong Su3), Yonghai Chen1), Ju Wu1), and Zhanguo Wang1) 1... of InAs deposition thickness on the structural and optical properties of InAs/InAlAs quantum wires (QWR) superlattices (SLS) was studied. The transmission electron microscopy (TEM) results show......
Optimization of Sputtering Parameters for the Deposition of Low Resistivity Indium Tin Oxide Thin FilmsNavid Yasrebi1,Behrang Bagheri1,Payam Yazdanfar1,Bizhan Rashidian1,Pezhman Sasanpour21... of the deposition experiments.First,at constant RF power,deposition at different pressure values is done,and the condition for achieving minimum sheet resistance(26.43 Ω/sq.) is found.In the next step,different......
Sputtering Deposition of Ultra-thin α-Fe2O3 Films for Solar Water SplittingLichao Jia,Karsten Harbauer,Peter Bogdanoff,Kluas Ellmer,Sebastian Fiechter摘 要:deposition power and time as well as the sputter gas flow(argon),the microstructure and morphology of the film were optimized.It was found that the increment in the film thickness resulted in the loss......
Growth of N-polar GaN on vicinal sapphire substrate by metal organic chemical vapor depositionCan-Tao Zhong,Guo-Yi ZhangState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University摘 要:The growth and properties of N-polar Ga N layers by metal organic chemical vapor deposition(MOCVD) were reported......
Sinica摘 要:<正> ZnS films were successfully grown by metalorganic chemical vapour deposition (MOCVD) at atmospheric pressure on (100)GaAs substrates.The deposition was carried out at substrate temperature between 280~550℃ with optimisation of reactor de-sign and growth conditions,the gas phase prereaction is effectively restrained.These epilayers......
and Engineering, University of Science and Technology Beijing, Beijing 100083, China摘 要:Electro-spark deposition(ESD) was adopted for preparing high... microhardness value of the coating is about 17410 N/mm2.The study reveals that the electro-spark deposition process has better coating quality and the coating has high wear resistance and hardness.关键词:......
id="ChDivSummary" name="ChDivSummary">In this work,the GaN thin films were directly deposited on multilayer graphene(MLG) by plasma-enhanced atomic layer deposition.The deposition was carried out......
