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• Fabrication of micro carbon pillar by laser-induced chemical vapor deposition

  来源： 《中南大学学报(英文版)2008年增刊第1期》——周健 罗迎社 李立君 钟琦文 李新华 殷水平

  power from 0.5 W to 4.5 W and the pressure of the precursor gas from 225×133.3 Pa to 680×133.3 Pa, the experiments of laser induced chemical vapor deposition were proceeded for fabrication of micro...J. Cent. South Univ. Technol. (2008) 15(s1): 197-201 DOI: 10.1007/s11771-008-345-8 Fabrication of micro carbon pillar by laser-induced chemical vapor deposition ZHOU Jian(周 健)1, LUO Yin-she(罗迎社......

• Numerical simulation of chemical vapor deposition reaction inpolysilicon reduction furnace

  来源： 《中南大学学报(英文版)2016年第1期》——夏小霞 王志奇 刘斌

  J. Cent. South Univ. (2016) 23: 44-51 DOI: 10.1007/s11771-016-3047-7 Numerical simulation of chemical vapor deposition reaction in polysilicon reduction furnace XIA Xiao-xia(夏小霞)1, 2, WANG Zhi-qi(王志... Central South University Press and Springer-Verlag Berlin Heidelberg 2016 Abstract: Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established......

• INTERNAL CHLORINATION OF Ni-Cr-Ce ALLOY EXPOSURE TO CHLORINE AT 575 ℃

  来源： 《中国有色金属学报(英文版)1996年第1期》——Tu Jiangping Liu Maoshen Mao Zhiyuan Li Zhizhang

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• Theoretical Calculation of the Real Vapor Pressure of Al during ISM Processing of Ni-xAl （at.pct） （x=25-50） Alloy

  来源： 《JOURNAL OF MATERIALS SCIENCE TECHNOLOG2004年第2期》——Jingjie GUO,Guizhong LIU, Yanqing SU, Jun JIA and Hengzhi FUSchool of Materials Science and Engineering, Harbin Institute of Technology, Harbin , China

  Theoretical Calculation of the Real Vapor Pressure of Al during ISM Processing of Ni-xAl (at.pct) (x=25-50) AlloyJingjie GUO,Guizhong LIU, Yanqing SU, Jun JIA and Hengzhi FUSchool of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China摘 要:<正> A new model was established to calculate the real vapor pressure of Al......

• Metallorganic Vapor Phase Epitaxy of(AlGa)InP on GaAs at Atmospheric Pressure

  来源： 《JOURNAL OF MATERIALS SCIENCE TECHNOLOG1993年第6期》——Hongwen REN Baibiao HUANG Shuqin YU Xian’gang XU Shiwen LIU Minhua JIANG Institute of Crystal Materials,Shandong University,Jinan,,China

  Metallorganic Vapor Phase Epitaxy of(AlGa)InP on GaAs at Atmospheric PressureHongwen REN Baibiao HUANG Shuqin YU Xian’gang XU Shiwen LIU Minhua JIANG Institute of Crystal Materials,Shandong University,Jinan,250100,China摘 要:<正> High quality (AlGa)InP epilayers lattice matched on GaAs substrates were grown by atmosphericpressure metallorganic vapor......

• Effects of carrier gas on densification of porous carbon-carbon composites during chemical vapor infiltration

  来源： 《中南大学学报(英文版)2003年第1期》——汤中华 邹志强 熊杰

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• Analysis of the SiOx Film Microstructure on Al Substrate by APCVD Process

  来源： 《材料热处理学报2004年第5期》——WANG You-wen GAN Zheng-hao WO Yin-hua ZHANG Ji-liang LI Jian

  :Ambient Pressure Chemical Vapor Deposition(APCVD); SiOx film on aluminum substrate; Microstructure; [全文内容正在添加中] ... University, Hangzhou, P.R. China;2.School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore) 摘要:A new kind of SiOx filmon Al substrate,prepared by Ambient Pressure......

• Preparation and characteristics of C/C composite brake disc by multi-cylindrical chemical vapor deposition processes^①

  来源： 《中南大学学报(英文版)2005年第4期》——袁毅东 张富宽 周万成

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• Isothermal diffusion of water vapor in unsaturated soils based on Fick’s second law

  来源： 《中南大学学报(英文版)2020年第7期》——毛雪松 刘飞飞 张建勋 吴谦 李颖颖 许铖

  migration. The main driving force for water vapor migration is generally considered to be the water vapor pressure gradient. Under equilibrium conditions, the water vapor pressure in the soil depends..., increasing the temperature gradient will intensify the water vapor migration [24-26]. Under isothermal conditions, vapor pressure gradient in the soil is decided by the moisture content of the unsaturated......

• Comparative modeling of gas transport in isothermal chemical vapor infiltration process of C/SiC composites

  来源： 《中国有色金属学报(英文版)2006年第z1期》——魏玺 成来飞 张立同 徐永东 曾庆丰

  Comparative modeling of gas transport in isothermal chemical vapor infiltration process of C/SiC composites   WEI Xi(魏 玺), CHENG Lai-fei(成来飞), ZHANG Li-tong(张立同), XU Yong-dong(徐永东), ZENG Qing... of ICVI process of C/SiC composites. Key words: C/SiC composites; modeling; isothermal chemical vapor infiltration; gas transport; convection 1 Introduction Carbon fiber-reinforced silicon carbide (C......