共搜索到2444条信息,每页显示10条信息,共245页。用时:0小时0分0秒247毫秒
Preparation of ITO transparent conductive film by sol-gel method LI Zhi-hua(李芝华)1, REN Dong-yan(任冬燕)2 1. School of Materials Science and Engineering, Central South University, Changsha 410083... conductive films were prepared on substrate of quartz glass by sol-gel method. The raw materials were nitrate indium, acetylacetone and the dopant of anhydrous chloride (SnCl4). The process from gel......
Optical properties of nanosized ZnO films prepared by sol-gel process LOU Xiao-bo (楼晓波), SHEN Hong-lie (沈鸿烈), ZHANG Hui (张 惠), LI Bin-bin (李斌斌) College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China Received 15 July 2007; accepted 10 September 2007 Abstract:Nanosized ZnO films were prepared by sol-gel process......
Sol-Gel法制备PLZT系铁电薄膜 宋世庚1,马远新2,郑应智1,侯识华1,郑毓峰3 (1.中国科学院,新疆物理研究所,新疆维吾尔自治区,乌鲁木齐,830011;2.新疆医科大学基础部,新疆维吾尔自治区,乌鲁木齐,830054;3.新疆大学物理系,新疆维吾尔自治区,乌鲁木齐,830046) 摘要:介绍了Sol-Gel法,并对近年来Sol-Gel法制备PLZT系铁电薄膜材料的有关研究进行了分析和总结,详细介绍了Sol-Gel法制备PLZT系铁电薄膜材料的各种原料及工艺流程. 关键词:Sol-Gel法; PLZT; 铁电薄膜; [全文内容正在添加中] ......
Sol-Gel法制备低阻SnO2薄膜 陈丽华1,全宝富1,刘凤敏1,李爱武1 (1.吉林大学电子工程系,) 摘要:采用sol-gel法制备了SnO2薄膜.研究了不同的实验条件对薄膜阻值的影响.利用XRD,XPS分析了薄膜的晶体结构和晶粒尺寸.利用这种低阻SnO2薄膜制作的热线型气敏元件对H2S具有较好的气敏特性. 关键词:sol-gel法; SnO2薄膜; 气敏特性; [全文内容正在添加中] ......
Preparation of Perovskite-Type Oxides La1-xSrxFe1-yCoyO3 Using EDTA Sol-Gel Method 王华1,马文会1,于洁1 (1.Faculty of Materials and Metallurgical Engineering, Kunming University of Science and Technology... complexing sol-gel method. The products were characterized by XRD, TEM, SEM, BET method(N2 adsorption)and laser granularity analysis for different synthesis conditions to obtain the optimum conditions......
Synthesis of CaCu3Ti4O12 powders and ceramics by sol-gel method using decanedioic acid and its dielectric propertiesWANG Mao-hua(王茂华), ZHOU Fu(周芙), WANG Qiu-li (王秋丽), YAO Chao(姚超)(School of Petrochemical Technology, Changzhou University, Changzhou 213164, China)Abstract:The CaCu3Ti4O12 xerogels, powders and ceramics were prepared through the sol-gel method using two kinds of organic acid......
Sol-Gel法制备 ZnO压敏陶瓷及其电性 彭斌1,刘素琴1,宋志方1,黄可龙1 (1.中南工业大学化学化工学院,长沙 410083) 摘要:采用溶胶-凝胶(sol-gel)工艺制备ZnO电压敏陶瓷粉体. 探讨其制备的最佳工艺条件:以Zn(NO3)2与NaOH为反应前驱物制取胶体, Zn2+浓度控制在0.5mol*L-1以上,pH值7.5左右,预烧温度300°C,陶瓷烧结温度1200°C;制得的压敏电阻的非线性系数α=28;研究了稀土La2O3 掺杂对该陶瓷电性的影响:低浓度掺杂时,可提高压敏电压,高浓度掺杂时,不呈现压敏特性;对粉体进行了X射线衍射和透射电镜分析,预烧后得到五元掺杂的ZnO粉体粒形呈球状,属六方晶系,粒径分布窄,约为40~80nm. 关键词:ZnO陶瓷; Sol-Gel法; 压敏电阻; ZnO ceramic; sol-gel process......
Synthesis of RE-Ag,AI-RE-doped sol-gel glass and films for solar cells D.L.Kovalenko1,W.Str2,V.E.Gaishun1,A.V.Semchenko1,V.V.Sidsky1 (1.Francisk Skorina Cornel State University,246019 Sovetskaya st.104,Gomel,Belarus;2.e)k(e) Abstract:The paper dealt with the study of fluorescence properties of sol-gel systems doped with rare-earth ions and co-doped with silver.The general problem......
Sol-Gel法制备 BaxSr1-xTiO3铁电薄膜化学机制的探讨 孟中岩1,丁永平2,金承钰1 (1.上海大学无机材料系, 上海 201800;2.上海交通大学, 上海 200030) 摘要:用FTIR分析, 结合DSC,XRD,AFM实验结果,展示了sol-gel法制备 BaxSr1-xTiO3(BST)薄膜热演化过程的化学机制. 研究表明:螯合剂HAcAc的引入减缓钛醇盐水解速率,改善晶化途径,降低结晶起始温度,从而制得了晶化完善,致密无裂纹的BST薄膜. 关键词:BST薄膜; sol-gel工艺; FTIR; DSC; XRD; AFM; BST thin films; sol-gel method; FTIR; DSC; XRD; AFM; [全文内容正在添加中] ......
......