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size D and volume fraction f of Sm2(Fe, Nb)17 phase and α-Fe phase in Sm12.7Fe86.3Nb1 alloy at different hydrogenation temperature 表2 不同温度氢处理过程中Sm2(Fe, Nb)17相(303)衍射与α-Fe相(110)衍射的峰位 Table 2...α-Fe的体积分数为43.1%, 而原块状试样经复合后的α-Fe的含量为14.0%, 残留的α-Fe量与退火后的1.87%(图3(a))相比仍旧较高. 图3 Sm12.7Fe86.3Nb1合金粉末HT处理及再抽真空处理,不同循环HDDR后的XRD谱 Fig.3 XRD patterns of Sm12.7Fe86.3Nb1 alloy by means of annealed......
A. Close-coupled gas atomization of metal alloy [A]. ProceedingsPM86 [C]. 1986. 29-32. [4]Alan Laulgy. Atomization: The Production of Metal Powder. Metal Powder Industries Federation, Princeton, NJ......
C L, INOUE A, ZHANG T. Ultrahigh performance of Ti-based glassy alloy tube sensor for Coriolis mass flowmeter [J]. Transactions of Nonferrous Metals Society of China, 2006, 16(s): s202-s205. [6......
the electrolysis[1]. However, arguments existed for Cu and Cu-riched Cu-Ni alloy. TARCY[1] explained that the metal phase was oxidized first and then dissolved, while OLSEN et al[6-8] concluded that the metal phase......
et al[9-11] found that the dehydrogenation pathway was hardly affected by the stoichiometry ratio of LiBH4 to MgH2 and Li-Mg alloy was formed under dynamic vacuum after dehydrogenation at high......
alloy as an anode for aluminum electrowinning[J]. Corrosion Science, 2006, 48: 2457-2469. [20] 赖延清, 张 勇, 张 刚, 李 劼, 贺跃辉, 黄伯云, 刘业翔. CaO掺杂对10NiO-NiFe2O4复合陶瓷烧结致密化的影响[J]. 中国有色金属学报, 2006, 16(8......
-Al alloy[J]. Mater Sci Eng A, 1989, 120(1):185-191. [8] HOU P Y. Segregation phenomena at thermally grown Al2O3/alloy interfaces[J]. Annual Review of Materials Research, 2008, 38: 275-298. [9......
the electronic structure of Co1-xFexS2 alloy. Using density functional method (DFT), BLANCHARD et al [9] suggested that there is a strong covalent bond between arsenic and iron atoms......
. Material properties of aluminum alloy for accurate draw-bend simulation [J]. ASME, 2001, 123: 287-292. [34] Kim H, Nargundkar N, Altan T. Prediction of bend allowance and springback in air bending [J......
. As for the TPV cell, In0.18Ga0.82Sb, an alloy of InSb and GaSb, is chosen because its energy band gap of 0.56 eV is sufficiently low for the TPV energy conversion. Figure 4(b) schematically depicts......
