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合硅烷偶联剂的铜箔抗剥离强度为21.76 N /cm,煮2 h后剥离强度为21.56 N/cm,损失率为0.92%；浸288 ℃焊锡20 s后,抗剥离强度为21.76 N/cm,损失率为0,与单独使用KH-550或HK-560相比可大幅提升铜箔与树脂胶板的抗剥离强度.Li等[30]以三甲氧基丙基硅烷(TMPS)和双(三甲氧基硅烷)乙烷(BTMSE)为环保黏合剂,采用溶胶凝胶法和浸渍法对Al,Cu...比只用三聚硫氰酸处理铜箔表面时的抗剥离强度可提高25.9%.Balaji等[32]通过水解和缩合反应制备了不同浓度对氨基硫酚掺杂的3-环氧丙氧基丙基三甲氧基硅烷基溶胶-凝胶基质(PATP-GPTMS),傅立叶变换红外光谱和X射线光电子能谱分析表明,在0.1 mol/L PATP-GPTMS/Cu涂层中,铜表面上的PATP和硫醇单层相连接,增强了铜与树脂板的化学键力,Tafel极化曲线表明,PAPT......
Changsha City, China, to analyze the contents of As, Cd, Cr, Cu, Hg, Mn, Ni, Pb and Zn. A combination of sampling data, multivariate statistical method, geostatistical analysis, direct exposure method... to determine spatial patterns in the total concentration of arsenic (As), cadmium (Cd), chromium (Cr), copper (Cu), mercury (Hg), manganese (Mn), nickel (Ni), lead (Pb) and zinc (Zn) at the field-scale......
. Well adherent diamond coatings on steel substrates[J]. Advanced Engineering Materials, 2008, 10(7): 657-660. [17] GLOZMAN O, BERNER A, SHECHTMAN D, HOFFMAN A. Influence of Cr-N interlayer properties..., HULTMAN L, JANSSON U. Magnetron sputtered W-C films with C60 as carbon source[J]. Thin Solid Films, 2003, 444(1/2): 29-37. [25] MASSALSKI T, OKAMOTO H. Binary alloy phase diagrams[M]. Materials Park, Ohio......
and aluminum alloy industry (3) [J]. Aluminum Processing, 2006(1): 1-7. [21] 敖 宏, 邓 超. 全球化大背景下我国资源型企业发展战略的完善[J]. 中央财经大学学报, 2008(10): 67-71.AO Hong, DENG Chao. Improvement of resource enterprise......
B, CHAUYEAU T, CHAUBET D, CASTELNAU O. Texture evolution and associated nucleation and growth mechanisms during annealing of a Zr Alloy [J]. Metallurgical and Materials Transactions A, 2009, 40... as incomplete pole figures for diffraction planes (0002) and using X-ray diffraction (XRD; Rigaku RINT-2500HK/PC, Cu Kα, 40 kV, 100 mA) to reveal the textures of deformed materials. The data were......
铬铁矿Mg(Cr,Fe,Al)2O4),镁铁矿Mg(Fe,Al)2O4),方镁石MgO,铝硅酸镁钠和无定形物质.铬渣通过分选,除去熔点较低的无定形物质,粗渣如镁铁矿和方镁石返回焙烧以充当填料.甘肃锦世化工[21-22]以返渣为填料,加入量为铬铁矿质量的2倍,炉料不结圈. 除返渣外,镁质矿物也可单独作为无钙填料,包括菱苦土,菱铁矿,方镁石矿,水镁石或合成的氧化镁,氢氧化镁及碳酸镁[23].镁质填料熔...,可能会在溶液中引入钙杂质[50].溶液中铝硅共存时,沉淀产物中w(Cr)＜0.7%,铬带损相对较少,但是与低碱溶液水解得到的氢氧化铝相比较,铬含量仍然较高. 2.2.2 铝酸钠结晶-种分氢氧化铝 钾碱亚熔盐液相氧化法中,为避免杂质对铬酸钾分离效率的影响,实现体系中铬铝的分离,WANG等[53]计算了KOH-K2CrO4-KAlO2-H2O和NaOH......
热导率,低热膨胀系数和轻量化是发展现代电子封装材料必须考虑的三大基本要素[4]. 电子封装材料主要包括塑料封装材料,陶瓷封装材料,金属及金属基复合材料.其中,金属基复合材料以金属或合金为基体,以高性能第二相为增强体,能够充分发挥各自组元的优良性能,成为电子封装行业研究热点之一.表1所列为常用金属和金属基电子封装材料的主要性能[5-8].其中,Al,Cu虽然热导率较高,但热膨胀系数太高.Kovar和Invar合金的热膨胀系数虽较低,但热导率太低,密度较高.Al/Si,Al/SiC,Cu/W和Cu/ZrW2O8等复合材料具有与Si,GaAs等半导体材料相匹配的热膨胀系数,但其热导率最高为200 W/(m·K),越来越难以满足未来大功率集成电路的要求.因此,传统电子封装材料因其本身性能的局限性很难满足现代电子信息工业对封装材料高性能和高可靠性的发展需求,迫切需要研发具有高热导率,低热膨胀系数,低......
. For the composition design, some metal, metalloid and gas elements (Ti, B, S, Si, Cr, F, W and N) are added into the coating to improve the properties. For example, to improve thermal stability of the DLC... on nanostructured coatings almost covered all the coating materials, including some soft film lubrication material, such as MoS2 [44], traditional hard metal coating material, such as Cr, Ni [45,46......
] Fig. 1 Process comparative figure of microwave and vacuum sintering of WC-8Co alloy[6] 2.2 微波与烧结材料的作用机制 由于不同材料对微波的感应机制和吸收程度不同,因此根据材料和微波之间的耦合关系将材料分为[32]吸波材料,透波材料和反射材料,但是这样的划分并不是绝对的,因为材料的吸波特性...升温速率的增加,WC晶粒的均匀度变差,尤其是在42.5 ℃/min时烧结样品的组织中粗细晶差异更加明显.这是因为,升温速率增加,热点吸收的能量增加,而热传递的时间减少,因此热点与冷点之间的温差(局部温度梯度)变大,较大的温度梯度导致WC晶粒尺寸存在较大的差异. 值得注意的是,热点加热现象不仅仅存在于硬质合金的微波烧结过程中,对粉末冶金的另外两个典型液相烧结产品W-Cu和W-Ni-Fe合金进行微波加......
Introduction Interest in alloy and cermet materials for fabricating inert anodes for use in industrial aluminum electrolysis has increased in recent years because of their significant advantages in terms... Jia-wei, ZHANG Gang, ZHANG Yong. Effect of CaO doping on corrosion resistance of Cu/(NiFe2O4-10NiO) cermet inert anode for aluminum electrolysis [J]. Journal of Central South University of Technology......
