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• Strain induced changes in performance of strained-Si/strained-Si_1-yGe_y/relaxed-Si_1-xGe_x MOSFETs and circuits for digital applications

  来源： 《中南大学学报(英文版)2017年第6期》——Kumar Subindu Kumari Amrita Das Mukul K

  ] BEISTER J, WACHOWIAK A, BOSCHKE R, HERRMANN T, UHLARZ M, MIKOLAJICK T. Mobility investigations on strained 30-nm high-k metal gate MOSFETs by geometrical magnetoresistance effect [J]. IEEE Transactions......