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Instruments and Methods in Physics Research B, 1996, 120: 156 -160. [15]King A C, Gutierrez A F, Saavedra A F, et al. Defect evolution of low energy, amorphizing germanium implants in silicon[J]. J......
. High sensitive tellurium based NO2 gas sensor [J]. Sensors and Actuators B, 2001, 73(1): 35-39. [5] ABDELAZIZ M M. Memory switching of germanium tellurium amorphous semiconductor [J]. Applied Surface......
on the determination of germanium by hydride generation-inductively coupled plasma atomic emission spectrometry [J]. Analytica Chimica Acta, 1998, 376(3): 283-291. [19] HONG K J, TOKUNAGA S, KAJIUCHI T......
in the magnetic field with magnetic induction of 0.5 T was higher than that without the magnetic field. Recently, ZHANG et al [10] compared the change in undercooling of pure copper and germanium melt......
during peritectic reaction. 2 Experimental Four master alloys with nominal compositions of 13.5%, 14.5%, 15.5% and 16.5% Ge were prepared from 99.99% purity copper and 99.99% purity germanium......
of Crystal Growth, 2013, 377: 192-196. [19] GLAZOV V M, SHCHELIKOV O D. Volume changes during melting and heating of silicon and germanium melts[J]. High Temperature, 2000, 38 (3): 405-412. [20] HIGUCHI K......
on a uncooled germanium thermoelectrical linear detector, has been used. Thermovision imaging is a non-contact method within real-time register emission of heat or infrared radiation. Since all......
山, 汤淑芳. N235萃取色谱法分离萃铟余液中锗的研究[J]. 稀有金属, 2002, 26(2): 116-119. JIANG Xinyu, ZHOU Chunshan, TANG Shufang. Study on separation of germanium from indium raffinate by N235 extraction chromatography[J......
]. Physical Review, 1965, 140: A1133-A1138. [13] KRESSE G, HAFNER J. Ab initio molecular-dynamics simulation of the liquid-metal-amorphous-semiconductor transition in germanium[J]. Physical Review B, 1994......
Trans Electron Devices, 2012, 59(4): 888–894. DOI: 10.1109/ TED.2011.2181178. [14] KAO K H, VERHULST ANNE S. Direct and indirect band-to-band tunneling in germanium-based TFETs [J]. IEEE Trans Electron...: 114514. DOI: 10.1063/1.4729068. [24] ALPIR C, MICHIELIS C D, PALESTRI P, SELMI L. Quantum mechanical study of the germanium election-hole bilayer tunnel FET [J]. IEEE Trans on Electron Devices, 2013, 60(9......