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Trans. Nonferrous Met. Soc. China 24(2014) 257-262 Recovery of indium by acid leaching waste ITO target based on neural network Rui-di LI, Tie-chui YUAN, Wen-bo FAN, Zi-li QIU, Wen-jun SU, Nan-qian... 50-60 g/L, oxidant addition content 10%, leaching temperature 70 °C and leaching time 2 h. Key words: indium; leaching rate; ITO waste target; BPNN model 1 Introduction Indium-tin oxide (ITO) thin film......
Removal of tin and extraction of indium from acid-dissolved solution of waste indium-tin targetsLI Rui-di(李瑞迪), YUAN Tie-chui(袁铁锤), FAN Wen-bo(范文博), ZHOU Li-bo(周立波), WU Hao-bo(吴浩波), LI Jian(李健) (State Key Laboratory of Powder Metallurgy (Central South University), Changsha 410083, China)Abstract:The recovery of indium from waste indium tin oxide (ITO) target has great significance......
溶于氧化铟的单一立方In2O3 结构,同时In,Sn和O 元素分布均匀,无元素富集现象,晶粒尺寸均匀,完全满足八代以上镀膜线的应用技术要求.关键词:ITO 靶材；粉浆浇注；浆料性能； 微观组织Fabrication process of large size ITO target materials by slip castingZHONG Jing-ming1,2,3,YUE Kun2,SUN... is polyacrylic acid),w(PEG)=1.5% (PEG is polyethylene glycol) and pH=9. The ITO target materials with relative density higher than 99.5% are achieved using the green-body mentioned above by pressureless......
成形工艺对烧结法制备ITO靶材的影响王玥1,刘家祥1,刘宸1(1.北京市北京化工大学材料科学与工程学院)摘 要:以平均粒径为30nm的ITO粉体为原料,添加少量聚乙烯醇(PVA)造粒,模压成形获得素坯,在氧气氛,1550℃烧结素坯制备ITO靶材.采用100~600MPa的成形压力,添加0.5%,1.0%,2.5...45.21%和98.45%.得出素坯的较佳制备条件为成型压力400MPa,PVA添加1.0%.关键词:粉末冶金； ITO靶材； 素坯； 成形压力； PVA......
; 文献标志码:A Effects of forming pressures on pore defects in ITO target prepared by cold isostatic pressing-pressureless sintering LIU Zhi-hong, CHEN Wei, LI Yu-hu, LIU Zhi-yong (School of Metallurgy and Environment, Central South University, Changsha 410083, China) Abstract: Pore defects are the primary cause that affects the density and uniformity of ITO target. The formation mechanism of pores......
, 474: 19?24. [6] SUZUKI M, MAEDA Y, MURAOKA M, HIGUCHI S, SAWADA Y. ITO films sputter-deposited using an ITO target sintered with vanadium oxide additive[J]. Mater Sci Eng B, 1998, 54: 43?45. [7...文章编号:1004-0609(2008)01-0048-06 退火处理对ITO和ITO?Zr薄膜性能的影响 张 波1,董显平1,徐晓峰2,赵 培3,吴建生1 (1. 上海交通大学 材料科学与工程学院 教育部高温材料及测试重点实验室,上海 200240； 2. 东华大学 理学院,上海 200051； 3. 中国科学院 上海技术物理研究所,上海 200083) 摘......
) derivatized ITO electrode [J]. Thin Solid Films, 2001, 394(1-2): 291-296. [8] MA H, CHO J S, PARK C H. A study of indium tin oxide thin film deposited at low temperature using facing target sputtering... Preparation of ITO transparent conductive film by sol-gel method LI Zhi-hua(李芝华)1, REN Dong-yan(任冬燕)2 1. School of Materials Science and Engineering, Central South University, Changsha 410083......
Effect of Particle Size on Target Sintering Behavior of Cubic ITO Nanopowders翟晓宇,Peng Xiang,Ma Yunqian,Liu Ting,刘家祥Beijing Key Laboratory of Electrochemical Process and Technology for Materials... equation of R=exp(-41.823 × d).When the particle size is 41.6 nm,the resistivity reaches the minimum value of 0.8 Ω·cm.The relative density of ITO target decreases with the increase of particle size.Fine......
films were deposited on Corning 2947 glass through the technique of sputtering with an ITO target (90% In2O3 and 10% SnO2) of 91.44 cm in diameter (99.99% in purity from Cathay Advance Materials Limited...Trans. Nonferrous Met. Soc. China 29(2019) 2566-2576 Tuning optical properties of ITO films grown by rf sputtering: Effects of oblique angle deposition and thermal annealing L. G. DAZA1, M. ACOSTA2......
of precipitate-free zones increase with extension of the holding time. Key words: ITO ceramic target; In4Sn3O12 grains; Sn-rich precipitate; microstructure 掺锡氧化铟(ITO)透明导电薄膜具有良好的导电性,可见光波段透过率高,红外光反射性强等特殊的光电性能,在平板...料热处理技术, 2012, 41(24): 31-34. PENG Ping, CHEN Jingchao, WANG Peng, et al. Preparation process research status and development trend of high density ITO target[J]. Material & Heat Treatment, 2012......
