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to the existing large density of the similar structure as anti-phase boundaries in the film. Key words: half-metal; Fe3O4; spintronic devices; magnetoresistance 1 Introduction Half-metallic Fe3O4 films...(MBE)[3], reactive ion beam deposition (IBD) [4], RF magnetron sputtering with an external inductively coupled RF source[5]. Using the Fe3O4 films in the spintronic devices, such as giant......
have been playing a pivotal role in spintronic devices of the contemporary information technology.Apart from conventional collinear spin materials such as collinear ferromagnets and collinear antiferromagnetic ally coupled materials,noncollinear spintronic materials have emerged as hot spots of research attention due to exotic physical phenomena.In this review,we first introduce two types......
Enhancement of room-temperature magnetoresistance in La0.6Dy0.1Sr0.3MnO3/AgxSONG Qixianga, NIU Xiaofeia, WANG Guiyinga, TANG Yongganga, CAI Zhiranga, and PENG Zhenshenga, b a Anhui Key Laboratory of Spintronic and Nanometric Materials(Cultivating Base), Suzhou College, Suzhou 234000, China b Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, China摘 要:
. With the significance of the obtained results, the studied compounds may potentially find spintronic and optoelectronic applications.关键词:......
states and the metallic feature is due to the higher crystal symmetry of rocksalt Zn0.5Cr0.5S. These results can provide helpful guidance for Cr doped ZnS to be used in spintronic devices.关键词:......
,these fundamental transport studies have shed important lights on the potential thermoelectric,spintronic and gas sensing applications of semiconductor NWs where the 1D confinement,SOI or surface......
antiferromagnetic(SAF) structure is achieved by DC current under an in-plane static magnetic field of ± 500 Oe.This structure is very promising for free layer in spintronic application.关键词:......
. With the significance of the obtained results, the studied compounds may potentially find spintronic and optoelectronic applications.关键词:......
applications in spintronic devices. Key words: Ce dopant; ZnS nanorods; phase transition; ferromagnetism; sulphur vacancy; thermal stability 1 Introduction Nanotechnology has provided a systematic pathway... because of attempts to develop novel optoelectronic and spintronic devices. Recently, room-temperature ferromagnetism was studied in ZnS nanoparticles doped with RE elements like Nd [17], Eu3+ [18......
Destruction of charge ordering phase in La0.4Ca0.6MnO3 induced by low Cr dopingPENG Zhenshenga, b, YANG Ganga, c, WANG Guiyinga, c, TANG Yongganga, c, GUO Huanyina, c, and MAO Qianga, c a Anhui Key Laboratory of Spintronic and Nanometric Materials Cultivating Base, Suzhou College, Suzhou 234000, China b Hefei National Laboratory for Physical Sciences at the Microscale, University of Science......