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Electrochemical Intercalation of Sodium into Silicon Thin Film Gyu-Bong Cho1,Dong-Yeon Kim1,Jou-Hyeon Ahn2,Ho-Suk Ryu1,Ki-Won Kim1,Won-Cheol Shin3,Hyo-Jun Ahn1,Jong-Seon Kim1 (1.I-cube center nano... lnc, Gyeonggi Technopark, 1271-11 Sal-dong, Sangnok-gu, Ansan-si, Gyeonggi-do 426-901, Korea) 摘要:In order to investigate the possibility of Si thin film as an anode for Na battery, we studied......
were also evaluated using nano indenter residual stress[4-6]. These results were compared and examined. 2 Evaluation method of thin film 2.1 Measurement of film thickness by X-ray reflection rate... Effect of additional element and heat treating temperature on micro-structure and mechanical behavior of Ag alloy thin film JU Dong-ying1, ISHIGURO S1, ARIZONO T1, HASEGAWA K2 1.Department......
gradation was densely graded, compatible with the Iranian Highway Asphalt Paving Code 2011 (Fig. 1); 3) Nano silica was used with an average particle size of 60 nm and a particle density of 2.33 g/cm3... in Fig. 6, the slope of the diagram slows down with increasing the nano silica amount. Moreover, increasing bitumen content leads to a thicker bitumen film surrounding aggregates and makes asphalt......
of CZTS. Key words: CZTS; sol-gel; sulfurizing; thin film solar cell 化合物半导体薄膜太阳电池由于具有成本低且易于实现大面积生产的优点,因而应用前景广阔.其中CuIn1-xGaxSe2 (CIGS) 薄膜太阳电池具有高效率,性能稳定等优点,受到广泛关注,实验室最高光电转换效率达到21.7%[1].但由于Ga和In为稀有元素,成本较高,CIGS...;Chemical composition of CZTS thin film 图2 退火前后薄膜表面SEM图 Fig. 2 SEM images of thin films before and after annealing treatment 2.3 物相结构分析 为了确定所制备的薄膜样品的物相组成,对在镀鉬玻璃上制备的CZTS薄膜进行XRD分析.图3所示为在......
; Transmitted spectra of ZnO thin film at different pressures 利用透射光谱可以同时测定ZnO薄膜的光学带隙宽度.根据半导体的能带理论,直接带隙半导体材料的吸收系数与光学带隙满足以下公式[21] 式中:为吸收系数；为光子能量；A为常数；Eg为带隙宽度.表3中Eg就是根据切线法所得到的ZnO薄膜的光学带隙.不同溅射气压下沉积的ZnO薄膜的光学带隙宽度在3.45 eV左右,高于ZnO体材料的室温光学带隙宽度,光学吸收边有向短波方向移动的趋势,说明溅射气压对ZnO的光学禁带宽度有一定的影响.由此可看出,在1.5 Pa下沉积的ZnO薄膜的光学吸收边发生明显蓝移,禁带宽度增大为3.51 eV. 表3 不同溅射气压下ZnO薄膜的禁带宽度 Table 3 Band gap of ZnO thin film......
Article ID: 1003-6326(2005)02-0404-06 Growth of bismuth telluride thin film on Pt by electrochemical atomic layer epitaxy ZHU Wen(朱 文), YANG Jun-you(杨君友), GAO Xian-hui(郜鲜辉), HOU Jie(侯 杰...: An automated thin-layer flow cell electrodeposition system was developed for growing Bi2Te3 thin film by ECALE. The dependence of the Bi and Te deposition potentials on Pt electrode was studied......
Ga can degrade or limit the electrical properties of the semiconductor devices [3]. Conventional refining methods such as electrolytic refining [4], zone refining [5], vacuum distillation [6... dimensions of the crystallizers are shown in Fig. 1(b). The crystallizers were made of Teflon. The bottom of the crystallizer was sealed with a 0.1 mm-thick Teflon film. The height of the liquid Ga......
that as the sphericity increases, the time that the acceleration reaches to zero, i.e., terminal velocity, decreases and the nano droplet will reach its terminal velocity. Fig. 3 Velocity profiles of nano.... Effect of thermal radiation on velocity and temperature fields of a thin liquid film over a stretching sheet in a porous medium [J]. Eur Phys J Plus, 2015, 130: 100. [21] GHASEMI S E, VATANI M, HATAMI M......
) of 3 ?C/cm2 and 109 kV/cm. Key words: dielectric; ferroelectric; BiFeO3-PbTiO3; thin Film, PLD 1 Introduction Since 1960s, bismuth ferrite, BiFeO3, was reported as simultaneously exhibiting.... Prominent ferroelectricity of BiFeO3 thin films prepared by pulsed-laser deposition[J]. Applied Physics Letters, 2003, 83: 3981. [3] WANG J, NEATON J B, RAMESH R. Epitaxial BiFeO3 multiferroic thin film......
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