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• Preparation, microstructure and dislocation of solar-grade multicrystalline silicon by directional solidification from metallurgical-grade silicon

  来源： 《中国有色金属学报(英文版)2012年第10期》——苏海军 张军 刘林 傅恒志

  density increases with the increase of solidification rate. Furthermore, the crystal growth behavior and dislocation formation mechanism of mc-Si were discussed. Key words: multi-crystalline silicon..., 2011, 21(6): 1340-1347. [3] Su H J, Zhang J, Liu L, Fu H Z. Preparation development of high-quality solar-grade multi-crystalline silicon by directional solidification [J]. Adv Mater Res, 2011, 311-313......

• Characterization of Band Sawing Dusts Generated in Cutting of Multi-crystalline Silicon Ingots

  来源： 《Journal Of Wuhan University Of Technology Materials Science Edition2010年第6期》——尹传强 周浪

  Characterization of Band Sawing Dusts Generated in Cutting of Multi-crystalline Silicon Ingots尹传强,周浪School of Photovoltaics/School of Materials Science and Engineering,Nanchang University摘 要:Physical-chemical characteristics of the band sawing dusts regarding to recovery of pure silicon from them were investigated.The experimental results show 50vol......

• Vacuum distillation refining of metallurgical grade silicon (Ⅱ)——Kinetics on removal of phosphorus from metallurgical grade silicon

  来源： 《中国有色金属学报(英文版)2007年增刊第1期(Part ⅡB)》——马文会 魏奎先 杨斌 刘大春 戴永年

  . Solar grade silicon feedstock supply for PV Industry [J]. Solar Energy Materials & Solar Cells, 2002, 72: 11-26. [5] SARTI D, EINHAUS R. Silicon feedstock for multi-crystalline photovoltaic industry... Vacuum distillation refining of metallurgical grade silicon (Ⅱ)--Kinetics on removal of phosphorus from metallurgical grade silicon MA Wen-hui(马文会)1, 2, WEI Kui-xian(魏奎先)1, 2, YANG Bin(杨 斌)1, 2......

• Low-temperature purification process of metallurgical silicon

  来源： 《中国有色金属学报(英文版)2011年第5期》——赵立新 王志 郭占成 李成义

  metallurgical grade (UMG) and plasma-purified UMG multi-crystalline silicon substrates [J]. Solar Energy Materials and Solar Cells, 2002, 72(1): 49-58. [11] YUGE N, ABE M, HANAZAWA K, BABA H, NAKAMURA... from the relative data of binary systems. However, the main data used in its database were Cost Action 507, in which only several elements were deemed soluble in the crystalline silicon, such as B, C......

• SILICON MICRO-TRENCH ETCHING USING HIGH-DENSITY PLASMA ETCHER

  来源： 《Acta Metallurgica Sinica2005年第3期》——H.C.Yu M.B. Chen J.M. Miao Z.G.Liu T.T. Sun

  SILICON MICRO-TRENCH ETCHING USING HIGH-DENSITY PLASMA ETCHER H.C.Yu1,M.B. Chen1,J.M. Miao2,Z.G.Liu1,T.T. Sun1 (1.Physics Department of ShanghaiJiaotong University, Shanghai 200240, China;2.Micromachine Center, School of Mechanical and Production Engineering, Nanyang Technological University, 639798, Singapore) Abstract:Dry etching of silicon is an essential process step for the fabrication......

• Preparation of porous silicon carbide by combustion synthesis^①

  来源： 《中南大学学报(英文版)2005年第2期》——张宇民 张剑寒 韩杰才

   ......

• Simulation and prediction in laser bending of silicon sheet

  来源： 《中国有色金属学报(英文版)2011年第z1期》——WANG Xu-yue XU Wei-xing, XU Wen-ji HU Ya-feng LIANG Yan-de WANG Lian-ji

  Simulation and prediction in laser bending of silicon sheet WANG Xu-yue, XU Wei-xing, XU Wen-ji, HU Ya-feng, LIANG Yan-de, WANG Lian-ji Key Laboratory for Precision and Non-traditional Machining... silicon sheet (0.2 mm in thickness) was investigated with JK701 Nd:YAG laser. The models were developed to describe the beam characteristics of pulsed laser. In order to simulate the process of laser......

• NITROGEN-OXYGEN COMPLEXES IN SILICON AND THEIR DONOR ACTION

  来源： 《中国有色金属学报(英文版)1999年第2期》——Liu Peidong Li Xiaojun

  ......

• INFLUENCE OF NITROGEN ON THERMAL WARPAGE IN CZOCHRALSKI SILICON WAFERS

  来源： 《中国有色金属学报(英文版)1999年第2期》——Lu Huanming

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• Dielectric properties of doped silicon carbide powder by thermal diffusion

  来源： 《中国有色金属学报(英文版)2007年增刊第1期(Part ⅡB)》——苏晓磊 李智敏 罗发 王晓艳 朱冬梅 周万城

  Dielectric properties of doped silicon carbide powder by thermal diffusion SU Xiao-lei(苏晓磊), LI Zhi-min(李智敏), LUO Fa(罗 发), WANG Xiao-yan(王晓艳), ZHU Dong-mei(朱冬梅), ZHOU Wan-cheng(周万城) State Key... the aluminum and nitrogen atoms affect the bond of silicon and carbon. The dielectric real part (ε′) and imaginary part (ε") of the nitrogen-doped sample are higher than those of the other samples......