共搜索到6477条信息,每页显示10条信息,共648页。用时:0小时0分0秒338毫秒
......
......
Electrochemical behavior and polishing properties of silicon wafer in alkaline slurry with abrasive CeO2 SONG Xiao-lan(宋晓岚)1, XU Da-yu(徐大余)1, ZHANG Xiao-wei(张晓伟)1, SHI Xun-da(史训达)2, JIANG Nan(江 楠... theoretic guidance on silicon polishing rate and ensure to adjust optimal components of slurry. Key words: Chemical mechanical polishing(CMP); material removal rate(MRR); electrochemical......
acid (HEDP), and tribasic ammonium citrate (TAC) were investigated by electrochemical techniques, X-ray photoelectron spectrometer (XPS) analysis, nano-scratch tests, AFM measurements, and polishing... polishing (ECP) illustrates the mechanism of mechanical abrasion accelerating electrochemical dissolution, that is, the residual stress caused by the mechanical wear enhances the electrochemical......
Trans. Nonferrous Met. Soc. China 22(2012) s876-s880 Effect of pulse time on surface characteristics and corrosion resistance during pulse electrochemical polishing Young-Bin KIM1, Jeong-Woo PARK2 1... 21 May 2012; accepted 13 August 2012 Abstract: Pulse electrochemical polishing (PECP) was used to improve the mechanical properties, such as surface roughness and corrosion resistance, of conductive......
Electrolyte composition and galvanic corrosion for ruthenium/copper electrochemical mechanical polishingYan-Fei Bian1,Wen-Jie Zhai1,Yuan-Yuan Cheng2,Bao-Quan Zhu11. School of Mechatronics Engineering, Harbin Institute of Technology2. School of Civil Engineering, Harbin Institute of Technology摘 要:Electrochemical mechanical polishing(ECMP)is a new......
Voltage-induced material removal mechanism of copper for electrochemical-mechanical polishing applications Sang-Jun HAN1, Yong-Jin SEO2 1. Nano-Information Material & Device Laboratory... states of active, passive, transient and trans-passive region could be characterized. And then, the mechanism of the process of voltage-induced material removal in electrochemical mechanical polishing......
Effect of electrochemical polishing time on surface topography of mild steelBaocheng Wang1,2) and Jinhua Zhu1) 1) State Key Laboratory for Mechanical Behavior of Metal Materials, Xi’an Jiaotong... in altitude density function (ADF) of the surface topography of mild steel during electrochemical polishing (ECP) was investigated, and the mechanism of the variation of surface roughness with polishing time......
Review on Application of Rare Earth Polishing Powders in Glass Polishing Li Xueshun1,YANG Guosheng1 (1.Baotou Tianjiao Seimi Rare Earth Polishing Powder Co. Ltd. , Baotou 014010, China) Abstract:The paper reviewed different explanations to the mechanism of glass polishing, the practices of glass polishing and the preparation of polishing powders, addressed the growth mechanism of CeO2 crystals......
Da-yu, ZHANG Xiao-wei, SHI Xun-da, JIANG Nan, QIU Guan-zhuo. Electrochemical behavior and polishing properties of silicon wafer in alkaline slurry with abrasive CeO2[J]. Trans Nonferrous Met Soc China... abrasives: The effect of polishing time and slurry solid content on oxide CMP[J]. Electrochemical and Solid-State Letters, 2007, 10(9): 243?247. [10] ARMINI S, WHELAN C M, MOINPOUR M, MAEX K. Composite......